Nitride based semiconductor light-emitting device
View Patent ↗Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Al x1 In y1 Ga (1-x1-y1) N (where 0≦x 1 ≦1, 0≦y 1 ≦1, and 0≦x 1 +y 1 ≦1), a multiple quantum well-structured active layer made of undoped In A Ga 1-A N (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type In y2 Ga 1-y2 N (where 0≦y 2 <1) formed on the active layer and a second layer made of p-type Al x3 In y3 Ga (1-x3-y3) N (where 0<x 3 ≦1, 0≦y 3 ≦1, and 0<x 3 +y 3 ≦1) formed on the first layer.
1. A nitride-based semiconductor light-emitting device, comprising:
an n-type clad layer made of n-type Al x1 In y1 Ga( 1-x1-y1 )N (where 0≦x 1 ≦1, 0≦y 1 ≦1, and 0≦x 1 +y 1 ≦1);
a multiple quantum well-structured active layer made of undoped In A Ga 1-A N (where 0≦A<1) formed on the n-type clad layer; and
a p-type clad layer formed on the multiple quantum well-structured active layer, including at least a first layer made of p-type In y2 Ga 1-y2 N (where 0≦y 2 <1) formed on the active layer and a second layer made of p-type Al x3 In y3 Ga( 1-x3-y3 )N (where 0<x 3 ≦1, 0≦y 3 ≦1, and 0<x 3 +y 3 ≦1) formed on the first layer;
wherein the thickness of the first layer is smaller than the thickness of the second layer,
wherein the first layer is substantially Al-free, and
wherein the first layer is in contact with the multiple quantum well-structured active layer wherein the p-type clad layer further includes a third layer made of p-type In y4 Ga 1-y4 N (where 0≦y 4 <1) formed on the second layer; wherein the third layer consist of a low concentration p-type GaN semiconductor layer having a first doping concentration formed on the second layer, and a high concentration p-type GaN semiconductor layer having a concentration higher than the first doping concentration formed on the low concentration p-type GaN semiconductor layer.
2. The nitride-based semiconductor light-emitting device according to claim 1 , wherein the second layer has a thickness of about 50 nm to about 200 nm.
3. The nitride-based semiconductor light-emitting device according to claim 2 , wherein the p-type clad layer has a thickness of at least 160 nm.
4. The nitride-based semiconductor light-emitting device according to 1 , wherein the first layer is a GaN semiconductor layer and the second layer is an Al GaN semiconductor layer.
5. The nitride-based semiconductor light-emitting device according to claim 1 , wherein the n-type clad layer is a GaN semiconductor layer.
6. A nitride-based semiconductor light-emitting device, comprising:
an n-type clad layer made of n-type Al x1 In y1 Ga( 1-x1-y1 )N (where 0≦x 1 ≦1, 0≦y 1 ≦1, and 0≦x 1 +y 1 ≦1);
an active layer comprising a multiple quantum well-structure made of undoped In A Ga 1-A N (where 0≦A<1) formed on the n-type clad layer; and
p-type clad layer formed on the multiple quantum well-structured active layer, including at least a first layer made of p-type GaN formed on the multiple quantum well-structured active layer and a second layer made of p-type Al x3 Ga( 1-x3 )N (where 0<x 3 ≦1) disposed on the first layer,
wherein the thickness of the first layer is smaller than the thickness of the second layer,
wherein the first layer is substantially Al-free, and
wherein the first layer is in contact with the multiple quantum well-structured active layer wherein the p-type clad layer further includes a third layer made of p-type In y4 Ga 1-y4 N (where 0≦y 4 <1) formed on the second layer; wherein the third layer consist of a low concentration p-type GaN semiconductor layer having a first doping concentration formed on the second layer, and a high concentration p-type GaN semiconductor layer having a concentration higher than the first doping concentration formed on the low concentration p-type GaN semiconductor layer.
7. The nitride-based semiconductor light-emitting device according to claim 1 , wherein the second layer has a higher Al concentration than the first layer.
8. The nitride-based semiconductor light-emitting device according to claim 1 , wherein a second layer is disposed directly on the first layer.
9. The nitride-based semiconductor light-emitting device according to claim 1 ,
wherein the thickness of the third layer is larger than the thickness of the first layer.
10. The nitride-based semiconductor light-emitting device according to claim 1 , wherein the third layer includes a first p-type GaN semiconductor layer and a second p-type GaN semiconductor layer which has a doping concentration different from that of the first p-type GaN semiconductor layer.
11. The nitride-based semiconductor light-emitting device according to claim 10 , wherein the first p-type GaN semiconductor layer is disposed closer to the second layer than the second p-type GaN semiconductor layer, and a doping concentration of the first p-type GaN semiconductor layer is lower than that of the second p-type GaN semiconductor layer.
12. The nitride-based semiconductor light-emitting device according to claim 1 ,
wherein the first layer has a higher hole mobility than the second layer.
13. The nitride-based semiconductor light-emitting device according to claim 12 , wherein the hole mobility of the first layer is from 15 cm 2 /Vs to 20 cm 2 /Vs, and the hole mobility of the second layer is from 5 cm 2 /Vs to 10 cm 2 /Vs.
14. The nitride-based semiconductor light-emitting device according to claim 12 , wherein the first layer has a higher doping concentration than the second layer.
15. The nitride-based semiconductor light-emitting device according to claim 1 , wherein the first layer has a thickness of greater than 10 nm and not greater than 30 nm.
16. A nitride-based semiconductor light-emitting device, comprising:
an n-type clad layer made of n-type Al x1 In y1 Ga( 1-x1-y1 )N (where 0≦x 1 ≦1, 0≦y 1 ≦1, and 0≦x 1 +y 1 ≦1);
a multiple quantum well-structured active layer made of undoped In A Ga 1-A N (where 0≦A<1) formed on the n-type clad layer; and
a p-type clad layer formed on the multiple quantum well-structured active layer, including at least a first layer made of p-type In y2 Ga 1-y2 N (where 0≦y 2 <1) formed on the active layer and a second layer made of p-type Al x3 In y3 Ga( 1-x3-y3 )N (where 0<x 3 ≦1, 0≦y 3 ≦1, and 0<x 3 +y 3 ≦1) formed on the first layer;
wherein the first layer is substantially Al-free, and
wherein the first layer is in contact with the multiple quantum well-structured active layer wherein the p-type clad layer further includes a third layer made of p-type In y4 Ga 1-y4 N (where 0≦y 4 <1) formed on the second layer; wherein the third layer consist of a low concentration p-type GaN semiconductor layer having a first doping concentration formed on the second layer, and a high concentration p-type GaN semiconductor layer having a concentration higher than the first doping concentration formed on the low concentration p-type GaN semiconductor layer.