Nitride semiconductor light emitting device and method for manufacturing the same

1. A nitride semiconductor light emitting device, comprising:

a substrate having an approximately rectangular top surface;

an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate;

an n-type electrode formed on the electrode region;

an activation layer comprising an un-doped nitride semiconductor material and formed on the n-type nitride semiconductor layer such that the electrode region is exposed;

a p-type nitride semiconductor layer formed on the activation layer; and

a p-type electrode formed on the p-type nitride semiconductor layer, the p-type electrode having a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and having a band-shaped extension connected to the bonding pad to extend along a lateral side, in opposite directions, at which the bonding pad is formed and along opposite lateral sides at which the n-type electrode and the bonding pad are not formed,

wherein the distance between the n-type electrode and the p-type electrode is substantially constant and configured to flow current uniformly over an entire light emitting region.

2. The device as set forth in claim 1 , further comprising: a buffer layer formed on the top surface of the substrate for providing lattice matching.

3. The device as set forth in claim 1 , further comprising:

a transparent layer formed on the top surface of the p-type nitride semiconductor layer for providing an ohmic contact.