Method of growing non-polar m-plane nitride semiconductor
View Patent ↗A method of growing a non-polar m-plane nitride semiconductor. A (11-23) plane sapphire substrate is prepared, and a non-polar (10-10) nitride semiconductor is grown on the sapphire substrate. The present invention can also be applied to a method for manufacturing other m-plane hexagonal semiconductors.
1. A method of manufacturing a nitride semiconductor, the method comprising steps of:
preparing a (11-23) plane sapphire substrate; and
growing a non-polar (10-10) m-plane nitride semiconductor on the (11-23) plane of the sapphire substrate.
2. The method according to claim 1 , wherein a crystal surface of the sapphire substrate has an offset angle in a range of substantially ±5° about c-axis direction.
3. The method according to claim 1 , wherein a crystal surface of the sapphire substrate has an offset angle in a range of substantially ±5° about a direction perpendicular to c-axis.
4. The method according to claim 1 , further comprising growing a buffer layer having an m-plane hexagonal structure on the sapphire substrate before growing the non-polar m-plane nitride semiconductor.
5. The method according to claim 4 , wherein the buffer layer comprises ZnO or SiC.
6. The method according to claim 1 , wherein the nitride semiconductor comprises a material that satisfies a composition formula of Al x In y Ga (l−x−y) N, where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1.
7. The method according to claim 1 , further comprising removing the sapphire substrate from the m-plane nitride semiconductor.
8. The method according to claim 7 , wherein the step of growing a nitride semiconductor comprises hydride vapor phase epitaxy.
9. A method of manufacturing a hexagonal crystal structure semiconductor, the method comprising steps of:
preparing a (11-23) plane sapphire substrate; and
growing a semiconductor having a (10-10) m-plane hexagonal crystal structure on the (11-23) plane of the sapphire substrate.