Photonic crystal light emitting device
View Patent ↗There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.
1. A photonic crystal light emitting device comprising:
a substrate;
a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and
first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively,
wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure and
the nano rod light emitting structures has a bottom surface shaped as a circle and has a radius and period satisfying following condition:
0.01 <r/a< 0.5.
2. The photonic crystal light emitting device of claim 1 , wherein portions between the nano rod light emitting structures are filled with a material having refractivity different from refractivity of a material for the light emitting structures.
3. The photonic crystal light emitting device of claim 2 , wherein the material filled in the portions between the nano rod light emitting structures is Si 0 2 .
4. The photonic crystal light emitting device of claim 1 , wherein the nano rod light emitting structures has a bottom surface shaped as one of a circle and a square.
5. A photonic crystal light emitting device comprising:
a substrate;
a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and
first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively,
wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure and
the second conductivity type semiconductor layer formed on the nano rod light emitting structures to cover the nano rod light emitting structures.
6. The photonic crystal light emitting device of claim 1 , further comprising an ohmic contact layer formed on the nano rod light emitting structures to cover the nano rod light emitting structures.
7. A photonic crystal light emitting device comprising:
a substrate;
a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and
first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively,
wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure and
the first conductivity type semiconductor layer formed between the substrate and the nano light emitting structures.
8. The photonic crystal light emitting device of claim 1 , wherein the first and second conductivity type semiconductor layers are n-type and p-type semiconductor layers, respectively.
9. The photonic crystal light emitting device of claim 1 , wherein the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer are formed of a nitride, respectively.
10. The photonic crystal light emitting device of claim 1 , wherein the nano rod light emitting structure has a size smaller than or identical to a wavelength of the light emitted from the active layer.