Nitride semiconductor device and method of manufacturing the same
View Patent ↗The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
1. A nitride semiconductor device comprising:
an n-type nitride semiconductor layer formed on a nitride crystal growth substrate;
an active layer formed on the n-type nitride semiconductor layer;
a first p-type nitride semiconductor layer formed on the active layer;
a micro-structured current diffusion pattern formed on the first p-type nitride semiconductor layer, the current diffusion pattern being made of an insulation material; and
a second p-type nitride semiconductor layer formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon;
wherein, the thickness of the current diffusion pattern is not more than approximately 10 Å.
2. The device as set forth in claim 1 , wherein the current diffusion pattern is composed of a silicon nitride (SiN x ) arranged in a nano-sized dot structure.
3. The device as set forth in claim 2 , wherein the second p-type nitride semiconductor layer has an upper surface etched using a pattern similar to the current diffusion pattern as a mask such that the upper surface of the second p-type nitride semiconductor layer has predetermined surface roughness.
4. The device as set forth in claim 1 , wherein the thickness of each of the first and second p-type nitride semiconductor layers is approximately 50 Å to 2000 Å.
5. A nitride semiconductor device comprising:
an n-type nitride semiconductor layer formed on a nitride crystal growth substrate;
an active layer formed on the n-type nitride semiconductor layer;
a first p-type nitride semiconductor layer formed on the active layer;
a micro-structured current diffusion pattern formed on the first p-type nitride semiconductor layer, the current diffusion pattern being made of an insulation material; and
a second p-type nitride semiconductor layer formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon;
wherein, the n-type nitride semiconductor layer comprises:
a first n-type nitride semiconductor layer formed on the upper surface of the substrate;
a silicon nitride pattern formed on the first n-type nitride semiconductor layer, the silicon nitride pattern being arranged in a nano-sized dot structure; and
a second n-type nitride semiconductor layer formed on the first n-type nitride semiconductor layer having the silicon nitride pattern formed thereon.
6. The device as set forth in claim 5 , wherein the current diffusion pattern is composed of a silicon nitride (SiN x ) arranged in a nano-sized dot structure.
7. The device as set forth in claim 6 , wherein the second p-type nitride semiconductor comprises an upper surface etched using a pattern similar to the current diffusion pattern such that the upper surface of the second p-type nitride semiconductor layer has a predetermined surface roughness.
8. The device as set forth in claim 5 , wherein the thickness of each of the first and second p-type nitride semiconductor layers is approximately 50 Å to 2000 Å.