SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS HAVING THE SAME
There is provided a showerhead including: a first head having at least one gas conduit provided therein to allow a first reaction gas to be supplied into a reaction chamber; a second head having a hole of a predetermined size formed to have the gas conduit extending therethrough; and a gas flow path formed between the gas conduit extending through the hole and the hole to allow a second reaction gas to be supplied into the reaction chamber.
1 . A showerhead comprising:
a first head having at least one gas conduit provided therein to allow a first reaction gas to be supplied into a reaction chamber;
a second head having a hole of a predetermined size formed to have the gas conduit extending therethrough; and
a gas flow path formed between the gas conduit extending through the hole and the hole to allow a second reaction gas to be supplied into the reaction chamber.
2 . The showerhead of claim 1 , wherein the gas flow path is defined by an interval of a predetermined size between an inner surface of the hole and an outer surface of the gas conduit.
3 . The showerhead of claim 1 , wherein the gas conduit is substantially center-aligned with the hole.
4 . The showerhead of claim 1 , wherein the gas conduit has a bottom end substantially flush with a bottom end of the hole.
5 . The showerhead of claim 1 , wherein the gas conduit has a thickness adjusted to change a length of a mixing section where the first reaction gas and the second reaction gas are mixed together.
6 . The showerhead of claim 1 , wherein the gas conduit comprises a hollow member having at least one gas jet opening to jet the first reaction gas therethrough.
7 . The showerhead of claim 1 , further comprising:
a third head disposed between the first and second heads, the third head having a supply conduit with a predetermined inner space such that the gas conduit is inserted thereinto; and
a supply flow path formed between the supply conduit and the gas conduit to supply a third reaction gas into the reaction chamber.
8 . The showerhead of claim 7 , wherein the gas flow path is formed between an outer surface of the gas conduit and the hole, and the supply flow path is formed between an inner surface of the supply conduit and an inner surface of the gas conduit.
9 . The showerhead of claim 7 , wherein the gas conduit, the hole and the supply conduit are substantially center-aligned with one another.
10 . The showerhead of claim 7 , wherein the gas conduit and the supply conduit have a thickness adjusted, respectively to change a length of a mixing section where the first, second and third reaction gases are mixed together.
11 . A chemical vapor deposition apparatus comprising:
a reaction chamber;
a first head having at least one gas conduit provided therein to allow a first reaction gas to be supplied into a reaction chamber;
a second head having a hole of a predetermined size formed to have the gas conduit extending therethrough; and
a gas flow path formed between the gas conduit extending through the hole and the hole to allow a second reaction gas to be supplied into the reaction chamber.
12 . The chemical vapor deposition apparatus of claim 11 , wherein the gas flow path is defined by an interval of a predetermined size between an inner surface of the hole and an outer surface of the gas conduit.
13 . The chemical vapor deposition apparatus of claim 11 , wherein the gas conduit is center-aligned with the hole.
14 . The chemical vapor deposition apparatus of claim 11 , wherein the gas conduit has a thickness adjusted to change a length of a mixing section where the first reaction gas and the second reaction gas are mixed together.
15 . The chemical vapor deposition apparatus of claim 11 , wherein the gas conduit comprises a hollow member having at least one gas jet opening to jet the first reaction gas therethrough.
16 . The chemical vapor deposition apparatus of claim 11 , further comprising:
a third head disposed between the first and second heads, the third head having a supply conduit with a predetermined inner space such that the gas conduit is inserted thereinto; and
a supply flow path formed between the supply conduit and the gas conduit to supply a third reaction gas into the reaction chamber.
17 . The chemical vapor deposition apparatus of claim 16 , wherein the gas flow path is formed between an outer surface of the gas conduit and the hole, and the supply flow path is formed between an inner surface of the supply conduit and an inner surface of the gas conduit.
18 . The chemical vapor deposition apparatus of claim 16 , wherein the gas conduit, the hole and the supply conduit are substantially center-aligned with one another.
19 . The chemical vapor deposition apparatus of claim 16 , wherein the gas conduit and the supply conduit have a thickness adjusted, respectively to change a length of a mixing section where the first, second and third reaction gases are mixed together.
20 . The chemical vapor deposition apparatus of claim 16 , wherein the gas conduit has a bottom end substantially flush with a bottom end of the hole.