Vertical type nitride semiconductor light emitting device and method of manufacturing the same
View Patent ↗A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
1. A nitride semiconductor device comprising:
an ohmic contact layer;
a p-type nitride semiconductor layer;
an active layer;
an n-type nitride semiconductor layer; and
an n-electrode on a conductive substrate,
wherein the p-type nitride semiconductor layer has a high resistance area of damaged nitride single crystal extending from a substantially central portion of a surface of the p-type nitride semiconductor layer, the surface contacting the ohmic contact layer, and
the n-type nitride layer contacting the n-electrode has another high resistance area of damaged nitride single crystal extending from a surface of the n-type nitride layer contacting the n-electrode in a substantially central portion thereof.
2. The nitride semiconductor device according to claim 1 , wherein the high resistance area has a contact resistance of at least 10 −2 Ω·cm 2 with respect to the ohmic contact layer.
3. The nitride semiconductor device according to claim 1 , wherein the high resistance area has a thickness smaller than that of the p-type nitride semiconductor layer where the high resistance area is formed.
4. The nitride semiconductor device according to claim 1 , wherein the high resistance area represents 10% to 50% with respect to a total area of the surface of the p-type nitride semiconductor layer which is in the side of the ohmic contact layer.
5. The nitride semiconductor device according to claim 1 , wherein the ohmic contact layer has high reflectivity.
6. The nitride semiconductor device according to claim 1 , further comprising:
a high reflectivity metal layer between the ohmic contact layer and the conductive substrate,
wherein the ohmic contact layer comprises a light transmissible material.