NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.
1 . A nitride semiconductor light emitting device, comprising:
a substrate;
a first n-nitride semiconductor layer formed on the substrate;
a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound;
a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, on which the first intermediate pattern layer is formed;
a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating;
a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, on which the second intermediate pattern layer is formed;
an active layer formed on the third n-nitride semiconductor layer; and
a p-nitride semiconductor layer formed on the active layer.
2 . The nitride semiconductor light emitting device of claim 1 , having a mesa-etched structure, which is etched from part of the p-nitride semiconductor layer to expose part of the second n-nitride semiconductor layer,
the device further comprising:
an n-electrode formed on an exposed area of the second n-nitride semiconductor layer; and
a p-electrode formed on the p-nitride semiconductor layer.
3 . The nitride semiconductor light emitting device of claim 1 , wherein each of the first and second intermediate pattern layer is made of one selected from a group consisting of SiO 2 , SiN and SiC.
4 . The nitride semiconductor light emitting device of claim 1 , wherein the first and second intermediate pattern layer are made of same Si compound.
5 . The nitride semiconductor light emitting device of claim 1 , wherein the first intermediate pattern layer has a thickness ranging from 1 nm to 10 nm.
6 . The nitride semiconductor light emitting device of claim 1 , wherein the second intermediate pattern layer has a thickness ranging from 1 nm to 10 nm.
7 . A method of manufacturing a nitride semiconductor light emitting device, comprising:
forming a first n-nitride semiconductor layer on a prepared substrate;
forming a first intermediate pattern layer on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound;
forming a second n-nitride semiconductor layer on the first n-nitride semiconductor layer, on which the first intermediate pattern layer is formed;
forming a second intermediate pattern layer on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating; and
forming a third n-nitride semiconductor layer on the second n-nitride semiconductor layer, on which the second intermediate pattern layer is formed.
8 . The method of claim 7 , wherein the substrate is made of one selected from a group consisting of Al 2 O 3 , SiC, ZnO, Si, GaAs, GaP, LiAl 2 O 3 , BN, AIN and GaN.
9 . The method of claim 7 , wherein the substrate is a template substrate having a material layer, which is made of one selected from a group consisting of GaN, InGaN, AlGaN and AlGaInN.
10 . The method of claim 7 , wherein the forming of a first intermediate pattern layer is carried out in situ between the forming of a first n-nitride semiconductor layer and the forming of a second n-nitride semiconductor layer.
11 . The method of claim 7 , wherein the forming of a second intermediate pattern layer is carried out in situ between the forming of a second n-nitride semiconductor layer and the forming of a third n-nitride semiconductor layer.
12 . The method of claim 7 , wherein the Si compound is one selected from a group consisting of SiO 2 , SiN and SiC.
13 . The method of claim 7 , wherein the first and second intermediate pattern layer are made of same Si compound.
14 . The method of claim 7 , wherein the first intermediate pattern layer has a thickness ranging from 1 nm to 10 nm.
15 . The method of claim 7 , wherein the second intermediate pattern layer has a thickness ranging from 1 nm to 10 nm.