High power flip chip LED
View Patent ↗A high power flip chip LED has an n-doped semiconductor layer formed on the sapphire substrate, with a plurality of first regions and a second region of intersecting lines for separating the first regions from each other. P-doped semiconductor layers are on the first regions of the n-doped semiconductor layer to form mesa structures. At least one pair of diagonal corners of the respective mesa structures are rounded inward to form first basins between adjacent inward-rounded corners. First metal layers are on the mesa structures in a same configuration. A second metal layer is on the second region of the n-doped semiconductor layer. First ohmic contacts are on the first metal layers. Second ohmic contacts are on the second metal layer in the first basins. The LED can prevent the current channeling to increase the luminous area while equalizing the current density area thereby generating high brightness light.
1. A high power flip chip Light Emitting Diode (LED) comprising:
a rectangular sapphire substrate;
an n-doped semiconductor layer formed on the sapphire substrate, and having a plurality of first regions and a second region of intersecting lines extended through the first regions to separate the first regions from each other;
a plurality of p-doped semiconductor layers formed respectively on the first regions of the n-doped semiconductor layer to form mesa structures having corners, at least one pair of diagonal corners of the respective mesa structures being rounded inward to form first basins between adjacent inward-rounded corners;
first metal layers formed respectively on the mesa structures in a same configuration;
a second metal layer formed on the second region of the n-doped semiconductor layer;
a plurality of first ohmic contacts formed respectively on the first metal layers; and
a plurality of second ohmic contacts formed respectively on the second metal layer in the first basins.
2. The high power flip chip LED according to claim 1 , wherein remaining corners of the mesa structures are rounded to form second basins.
3. The high power flip chip LED according to claim 2 , wherein the first and second basins have a same radius.
4. The high power flip chip LED according to claim 2 , wherein the second basins have a same radius.
5. The high power flip chip LED according to claim 1 , wherein the first basins have a same radius.
6. The high power flip chip LED according to claim 1 , wherein the first metal layers are configured symmetric about each pair of diagonal corners.
7. The high power flip chip LED according to claim 1 , wherein the second metal layer is integrally formed around the first metal layers.
8. The high power flip chip LED according to claim 1 , wherein the sapphire substrate is replaced by one selected from a group including a SiC substrate, an oxide substrate and a carbide substrate.
9. A high power flip chip Light Emitting Diode (LED) comprising:
a rectangular sapphire substrate;
an n-doped semiconductor layer formed on the sapphire substrate, and having a plurality of first regions and a second region of intersecting lines extended through the first regions to separate the first regions from each other;
a plurality of p-doped semiconductor layers formed respectively on the first regions of the n-doped semiconductor layer to form mesa structures having corners, all of the corners being rounded inward to form basins;
first metal layers formed respectively on the mesa structures in a same configuration;
a second metal layer formed on the second region of the n-doped semiconductor layer;
a plurality of first ohmic contacts formed respectively on the first metal layers; and
a plurality of second ohmic contacts formed respectively on the second metal layer in the first basins.
10. The high power flip chip LED according to claim 9 , wherein the basins have a same radius.
11. The high power flip chip LED according to claim 9 , wherein the first metal layers are configured symmetric about each pair of diagonal corners.
12. The high power flip chip LED according to claim 9 , wherein the second metal layer is integrally formed around the first metal layers.
13. The high power flip chip LED according to claim 9 , wherein the sapphire substrate is replaced by one selected from a group including a SiC substrate, an oxide substrate and a carbide substrate.