IP Library › Granted Patent US 6,657,237
Granted Patent Utility
US 6,657,237 · Confirmation No. 9720

GAN BASED GROUP III-V NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

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2003-09-30 IFEE Issue Fee Payment (PTO-85B) 2 View
2003-09-30 LET. Miscellaneous Incoming Letter 2 View
2001-12-12 TRNA Transmittal of New Application 3 View
2001-12-12 ADS Application Data Sheet 5 View
2001-12-12 A.PE Preliminary Amendment 12 View
2001-12-12 SPEC Specification 30 View
2001-12-12 CLM Claims 10 View
2001-12-12 ABST Abstract 1 View
2001-12-12 DRW Drawings-only black and white line drawings 22 View
2001-12-12 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,657,237
App. No.
10/012,309
Filed
2001-12-12
Granted
2003-12-02
Pub. No.
US20020074556A1
Art Unit
2814
PTA
-66 days