Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor material
View Patent ↗A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
1. A method for fabricating a light-emitting device, the method comprising:
(a) sequentially forming a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, for inducing light emission, on a high-resistant substrate;
(b) forming a light-transmitting conductive layer on the second compound semiconductor layer;
(c) forming at least a via hole by dry etching a part of the high-resistant substrate and the first compound semiconductor layer using a reaction gas comprising at least Cl 2 or BCI 3 ,
wherein the depth of the via hole is shallower than a sum of the thickness of the high-resistant substrate and the first compound semiconductor layer; and
(d) forming a light-shielding conductive layer to cover the exposed region of the first compound semiconductor layer, such that the light-shielding conductive layer reflects the light emitted from the active layer upwardly,
wherein the dry etching of portions of the high-resistant substrate and the first compound semiconductor layer is performed in a single process.
2. The method of claim 1 , wherein the reaction gas further comprises argon (Ar).
3. The method of claim 1 , wherein the high-resistant substrate is a sapphire substrate.
4. The method of claim 1 , wherein the light-shielding conductive layer covers the surface of the high-resistant substrate.
5. The method of claim 1 , wherein the light-shielding conductive layer is formed of a material selected from the group consisting of Au, Ag, Pt, Cu, Ni, In, or an alloy thereof.