Patent Assignment
Reel/Frame 029179/0874
Change of Name
Recorded: 2012-10-24
Pages: 4
Assignor
SAMSUNG ELECTRO-MECHANICS CO., LTD.
Executed: 2012-10-15
Assignee
SAMSUNG ELECTRONICS CO., LTD.
(MAETAN-DONG), 129 SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, SEOUL, KOREA, REPUBLIC OF
Covered Properties
(31)
Laser Diode Using Reflective Layer Including Air Layer and Method for Fabricating the Same
Light Emitting Diode, Light Emitting Device Using the Same, and Fabrication Processes Therefor
Gan Series Surface-Emitting Laser Diode Having Spacer for Effective Diffusion of Holes Between P-Type Electrode and Active Layer, and Method for Manufacturing the Same
White Light Emitting Diode and Method for Manufacturing the Same
Vertical Gan Light Emitting Diode and Method for Manufacturing the Same
Fabrication Method of Nitride Semiconductors and Nitride Semiconductor Structure Fabricated Thereby
White Light Emitting Device
Coated Nanoparticle and Electronic Device Using the Same
Two-Wavelength Semiconductor Laser Device and Method of Manufacturing the Same
Light Emitting Device and Method of Manufacturing the Same
Semiconductor Laser Diode with Current Restricting Layer and Fabrication Method Thereof
Nitride Semiconductor Light Emitting Device and Method for Manufacturing the Same
Method for Producing Molding Compound Resin Tablet for Wavelength Conversion, and Method for Manufacturing White Light Emitting Diode by Using the Production Method
Led Package and Backlight Assembly for Lcd Comprising the Same
Nitride Semiconductor Device and Method of Manufacturing the Same
Direct-Illumination Backlight Apparatus Having Transparent Plate Acting as Light Guide Plate
Light Emitting Diode and Method of Fabricating the Same
Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
White light emitting diode module
Application:
12/081,524 →
Publication:
US 2008/0197366
High Power Led Housing and Fabrication Method Thereof
Sulfur-Containing Dispersant and Sulfide Phosphor Paste Composition Comprising the Same
Multiple Reflection Layer Electrode, Compound Semiconductor Light Emitting Device Having the Same and Methods of Fabricating the Same
Method for Manufacturing of Light Emitting Device Using Gan Series Iii-V Group Nitride Semiconductor Material
Led Package Frame and Led Package Having the Same
Side View Light Emitting Diode Package
Application:
12/550,073 →
Publication:
US 2009/0321779
Semiconductor Light Emitting Diode Having High Efficiency and Method of Manufacturing the Same
Nitride-Based Semiconductor Light Emitting Device and Method of Manufacturing the Same
Method of Manufacturing Vertical Light Emitting Device
Plane Light Source and Lcd Backlight Unit Having the Same
Light Emitting Diode Array Driving Apparatus
Gallium Nitride Based Semiconductor Light Emitting Diode
Application:
13/165,203 →
Publication:
US 2011/0248240
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 22, 2006
From: JANG, EUN-JOO; JUN, SHIN-AE
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 018340/0696 →
Assignment of Assignor's Interest
Sep 25, 2007
From: KIM, HYUNG SUK; PARK, JUNG KYU; AHN, HO SIK; JEONG, YOUNG JUNE
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 019871/0541 →
Assignment of Assignor's Interest
Mar 24, 2008
From: KOH, CHONG MANN
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 020693/0173 →
Assignment of Assignor's Interest
Feb 2, 2010
From: KIM, JE WON; KIM, SUN WOON; KIM, DONG JOON
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 023884/0069 →