White light emitting device

1. A white LED comprising:

a light source device; and

a phosphor containing light emitting nanoparticles exhibiting a quantum confinement effect and an inorganic phosphor that emit a white light by being excited by the light source,

wherein the phosphor includes a first phosphor layer formed on the light source device and containing red light emitting nanoparticles, and a fourth phosphor layer formed on the first phosphor layer and containing at least one of green light emitting nanoparticles and a green inorganic phosphor and at least one of blue light emitting nanoparticles and a blue inorganic phosphor, and

wherein a light absorption by the light emitting nanoparticles is 50% or less.

2. The white LED of claim 1 , wherein the nanoparticles are formed of Group II-VI semiconductor compound quantum dots or Group III-V semiconductor quantum dots.

3. The white LED of claim 1 , wherein

the green inorganic phosphor is at least one selected from the group consisting of YBO 3 : Ce 3+ ,Tb 3+ ; BaMgAl 10 O 17 :Eu 2+ , Mn 2+ ;(Sr,Ca,Ba)(Al,Ga) 2 S 4 :Eu 2+ ; ZnS:Cu,Al; Ca 8 Mg(SiO 4 ) 4 Cl 2 : Eu 2+ , Mn 2+ ; Ba 2 SiO 4 : Eu 2+ ; (Ba,Sr) 2 SiO 4 : Eu 2+ ; Ba 2 (Mg, Zn)Si 2 O 7 :Eu 2+ ; (Ba,Sr)Al 2 O 4 : Eu 2+ ; and Sr 2 Si 3 O 8 .2SrCl 2 :Eu 2+ , and the blue inorganic phosphor is at least one selected from the group consisting of (Sr,Mg,Ca) 10 (PO 4 ) 6 Cl 2 :Eu 2+ ; BaMgAl 10 O 17 :Eu 2+ ; and BaMg 2 Al 16 O 27 :Eu 2+ .

4. The white LED of claim 1 , wherein the wavelength of the light source is in the range of from 360 nm to 440 nm.

5. The white LED of claim 1 , wherein the light source device is a GaN-based light emitting device.

6. The white LED of claim 1 , wherein the first phosphor layer further comprises a red inorganic phosphor.

7. The white LED of claim 1 , wherein the light absorption is UV light absorption.