Light emitting device and method of manufacturing the same
View Patent ↗Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
1. A method of manufacturing a light emitting device, comprising:
forming an n-type compound semiconductor layer on a transparent substrate;
forming sequentially an active layer and a p-type compound semiconductor layer on the n-type compound semiconductor layer;
patterning the p-type compound semiconductor layer and the active layer to expose a predetermined portion of the n-type compound semiconductor layer;
forming an n-type electrode on the exposed region of the n-type compound semiconductor layer;
forming sequentially a metal compound film and a conductive reflection film on the patterned p-type compound semiconductor layer; and
oxidizing the metal compound film to form a contact resistance reducing film, after forming the conductive reflection film.
2. The method of claim 1 , wherein the forming a metal compound film and a conductive reflection film comprising
forming a photosensitive film pattern for exposing the p-type compound semiconductor layer on the p-type compound semiconductor layer;
forming a metal compound film contacting the exposed portion of the p-type compound semiconductor layer on the photosensitive film pattern; and
forming a conductive reflection film on the metal compound film.
3. The method of claim 2 , wherein, after the oxidizing the metal compound film, the photosensitive film pattern together with the oxidized metal compound film and the conductive reflection film are removed.
4. The method of claim 1 , wherein the metal compound film is a lanthanum nickel film.
5. The method of claim 1 , wherein the conductive reflection film is formed of a material selected from the group consisting of silver (Ag), aluminum (Al), rhodium (Rh), and tin (Sn).
6. The method of claim 1 , wherein after oxidizing the metal compound film, a resultant in which the oxidized metal compound film is formed is annealed under nitrogen atmosphere.
7. The method of claim 2 , wherein the metal compound film is a lanthanum nickel film.