Nitride semiconductor light emitting device and method for manufacturing the same
View Patent ↗A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.
1. A method of manufacturing a nitride semiconductor light emitting device, comprising:
providing a substrate having an approximately rectangular top surface;
forming an n-type nitride semiconductor layer on the substrate;
forming an activation layer comprising an un-doped nitride semiconductor material on the n-type nitride semiconductor layer;
forming a p-type nitride semiconductor layer on the activation layer;
removing some portions of the p-type nitride semiconductor layer and activation layer to expose an electrode region having a predetermined area adjacent to a center of a lateral side of the top surface of the n-type nitride semiconductor layer; forming an n-type electrode on the electrode region; and
forming a p-type electrode on the p-type nitride semiconductor layer, the p-type electrode having a bonding pad formed adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and having a band-shaped extension connected to the bonding pad to extend along a lateral side in opposite directions, at which the bonding pad is formed and along opposite lateral sides at which the n-type and the bonding pad are not formed,
wherein the distance between the n-type electrode and the p-type electrode is substantially constant and configured to flow current uniformly over an entire light emitting region.
2. The method as set forth in claim 1 , further comprising the step of: forming a buffer layer on the top surface of the substrate for providing lattice matching.
3. The method as set forth in claim 1 , further comprising the step of: forming a transparent layer on the top surface of the p-type nitride semiconductor layer for providing an ohmic contact.