Nitride semiconductor light emitting device and method of manufacturing the same
View Patent ↗A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.
1. A method of manufacturing a nitride semiconductor light emitting device, comprising the steps of:
forming an n-type nitride semiconductor layer on a substrate;
forming an active layer on the n-type nitride semiconductor layer;
forming a p-type nitride semiconductor layer on the active layer;
forming an undoped GaN layer on the p-type nitride semiconductor layer;
forming an AlGaN layer on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer; and
forming an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other.
2. The method as set forth in claim 1 , wherein the undoped GaN layer has a thickness of 10˜100 Å.
3. The method as set forth in claim 1 , wherein the AlGaN layer has an Al content in the range of 10˜50%.
4. The method as set forth in claim 3 , wherein the AlGaN layer has a thickness of 50˜250 Å.
5. The method as set forth in claim 1 , wherein the AlGaN layer is an undoped AlGaN layer.
6. The method as set forth in claim 1 , wherein the AlGaN layer is an n-type AlGaN layer.
7. The method as set forth in claim 1 , wherein the AlGaN layer comprises oxygen as an impurity.
8. The method as set forth in claim 1 , further comprising the step of annealing the AlGaN layer in an oxygen atmosphere after forming the AlGaN layer.
9. The method as set forth in claim 1 , further comprising the step of forming an ITO electrode on the AlGaN layer before forming the p-side electrode, wherein the p-side electrode is formed on the ITO electrode.