Multi-wavelength semiconductor laser device

1. A multi-wavelength semiconductor laser device, comprising:

a substrate having a top surface divided into a first region and a second region;

a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and

a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate,

wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear; and

wherein the semiconductor laser device further comprises a slit-shaped mirror formed in the first conductivity-type clad layer, the active layer and the second conductivity-type clad layer at the outer side of the bent parts in the high-output LD.

2. The semiconductor laser device according to claim 1 , wherein the bent parts of the first ridge structure form an angle of 20° to 160°.

3. The semiconductor laser device according to claim 1 , wherein one or both sides of at least one of the bent parts are curves.

4. The semiconductor laser device according to claim 1 , wherein the first ridge structure has parts overlapped by the bent parts.

5. The semiconductor laser device according to claim 4 , wherein the distance between the overlapped parts is not smaller than 10 μm.

6. The semiconductor laser device according to claim 1 , wherein the bottom face of the first ridge structure adjacent to the mirror has a smaller width than the other bottom faces of the first ridge structure.

7. The semiconductor laser device according to claim 1 , wherein a dielectric film is formed on the cross sections of the mirror.

8. The semiconductor laser device according to claim 1 wherein the second conductivity-type clad layer of the high-output LD comprises a second conductivity-type lower clad layer formed below the first ridge structure and a second conductivity-type upper clad layer formed in the first ridge structure; and the high-output LD further includes an etch stop layer formed between the second conductivity-type lower and upper clad layers.

9. The semiconductor laser device according to claim 8 , wherein the etch stop layer is formed only just below the first ridge structure.