Fabrication method of lithography mask and formation method of fine pattern using the same

1. A method of fabricating a lithography mask, the method comprising:

forming a transparent polymer layer on a surface of a first substrate where a convex-concave pattern is formed;

separating the transparent polymer layer from the first substrate, the transparent polymer layer having a convex-concave surface formed by the convex-concave pattern of the first substrate transferred thereto and a planar surface onto which light is irradiated, opposing the convex-concave surface;

depositing a metal thin film on the convex-concave surface of the transparent polymer layer;

forming a self-assembled monolayer on a second substrate;

disposing the transparent polymer layer on the second substrate such that the self-assembled monolayer and the metal thin film are partially bonded together; and

separating the transparent polymer layer from the second substrate such that a portion of the metal thin film bonded to the self-assembled monolayer is removed,

wherein a metal thin film pattern having the portion of the metal thin film removed therefrom is formed on the convex-concave surface of the transparent polymer layer, and

wherein portions of the convex-concave surface between convexes and concaves are inclined with respect to the planar surface, and

wherein portions of an outer surface of the metal thin film pattern are inclined with respect to the planar surface.

2. The method of claim 1 , wherein the transparent polymer layer is formed of a transparent silicon resin-based elastomer.

3. The method of claim 1 , wherein the second substrate is a glass substrate, and

the method further comprises plasma-treating a top surface of the second substrate, before the forming a self-assembled monolayer on a second substrate.

4. The method of claim 1 , wherein the self-assembled monolayer is a thiol-based monolayer.

5. The method of claim 1 , wherein the metal thin film is formed of one of Ag and Cu.

6. The method of claim 1 , wherein the metal thin film has a thickness of 20 to 100 nm.

7. A lithography mask comprising:

a transparent polymer layer including a first main surface having a convex-concave surface and a second main surface opposing the first main surface, the second main surface having light irradiated there onto; and

a metal thin film pattern formed on the first main surface such that the transparent polymer layer is exposed at convex portions of the convex-concave surface,

wherein portions of the first main surface between convexes and concaves are inclined with respect to the second main surface, and

wherein portions of an outer surface of the metal thin film pattern are inclined with respect to the second main surface.

8. The lithography mask of claim 7 , wherein the transparent polymer layer is a transparent resin-based elastomer.

9. The lithography mask of claim 7 , wherein the metal thin film is formed of one of Ag and Cu.

10. The lithography mask of claim 7 , wherein the metal thin film has a thickness of 20 to 100 nm.

11. A method of forming a fine pattern, the method comprising:

providing a lithography mask comprising a transparent polymer layer including a first main surface having a convex-concave surface and a second main surface opposing the first main surface, the second main surface having light irradiated there onto; and a metal thin film pattern formed on the first main surface such that the transparent polymer layer is exposed at convex portions of the convex-concave surface, wherein portions of the first main surface between convexes and concaves are inclined with respect to the second main surface, and wherein portions of an outer surface of the metal thin film pattern are inclined with respect to the second main surface;

forming a photoresist layer on a surface of an object where a fine pattern is to be formed;

disposing the lithography mask on the object such that the first main surface of the lithography mask is in contact with the photoresist;

selectively photo-etching the photoresist using the lithography mask to form a photoresist pattern; and

forming a desired fine pattern on the object using the photoresist pattern.

12. The method of claim 11 , wherein the providing a lithography mask comprises:

forming the transparent polymer layer on a surface of a first substrate where a convex-concave pattern is formed;

separating the transparent polymer layer from the first substrate, the transparent polymer layer having a convex-concave surface formed by the convex-concave pattern of the first substrate transferred thereto;

depositing a metal thin film on the convex-concave surface of the transparent polymer layer;

forming a self-assembled monolayer on a second substrate;

disposing the transparent polymer layer on the second substrate such that the self-assembled monolayer and the metal thin film are partially bonded together; and

separating the transparent polymer layer from the second substrate such that a portion of the metal thin film bonded to the self-assembled monolayer is removed,

wherein a metal thin film pattern having the portion of the metal thin film removed therefrom is formed on the convex-concave surface of the transparent polymer layer.

13. The method of claim 11 , wherein the object is a semiconductor light emitting diode.