Method of manufacturing high power array type semiconductor laser device
View Patent ↗A method of manufacturing an array type semiconductor laser device. The method includes forming first and second electrodes on lower and upper surfaces of a wafer comprising a plurality of semiconductor laser arrays having a plurality of laser emission regions, and forming a metal bonding layer on the second electrode of the wafer. The method also includes dicing the wafer into the semiconductor laser arrays and mounting each of the individually separated semiconductor laser arrays on a base with the surface of the metal bonding layer in contact with the base. The method further includes melting the metal bonding layer to fix the mounted semiconductor laser array on the base.
1. A method of manufacturing a high power array type semiconductor laser device, comprising:
forming first and second electrodes on lower and upper surfaces of a wafer comprising a plurality of semiconductor laser arrays having a plurality of laser emission regions;
forming a metal bonding layer on a surface of the second electrode of the wafer, the metal bonding layer having open regions, such that the second electrode is partially exposed, wherein the bonding layer has a plurality of separated regions, which are spaced apart from edges of an upper surface of the second electrode and are spaced apart from each other to form void regions;
dicing the wafer into the semiconductor laser arrays having the metal bonding layer;
after forming a metal bonding layer, having open regions, on the surface of the second electrode of the wafer, mounting each of the individually separated semiconductor laser arrays on a base with a surface of the metal bonding layer in contact with the base, wherein the metal bonding layer partially exposes the second electrode via the plurality of separated regions; and
melting the metal bonding layer to fix the mounted semiconductor laser array on the base, wherein the melted metal bonding layer is pressed by the semiconductor laser array and spread in a sideward direction into the void regions, such that at least parts of the separated regions of the metal bonding layer are directly in contact with each other in the void regions.
2. The method according to claim 1 , wherein the step of forming the first and second electrodes comprises:
depositing the first and second electrodes on lower and upper surfaces of the wafer, respectively; and
heat-treating the deposited first and second electrodes.
3. The method according to claim 1 , wherein the second electrode is closer to an active region of the laser than the first electrode.
4. The method according to claim 1 , wherein the step of forming the metal bonding layer comprises:
forming a photoresist pattern having open regions, which are spaced apart from edges of the upper surface of the second electrode and are spaced apart from each other;
depositing a metal bonding layer in the photoresist pattern; and
removing the photoresist pattern by a lift-off process to form the metal bonding layer having open regions, which are spaced apart from the edges of the upper surface of the second electrode and spaced apart from each other.
5. The method according to claim 4 , wherein the photoresist pattern is formed with a plurality of the open regions spaced apart.
6. The method according to claim 1 , wherein the metal bonding layer is made of one selected from the group consisting of In, Pb, Sn, Au, Ag and alloys thereof.
7. The method according to claim 1 , wherein the base comprises a ceramic substrate or a metal substrate.
8. The method according to claim 1 , wherein the metal bonding layer partially exposes the second electrode through the void regions between the plurality of separated regions.