Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same
View Patent ↗Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
1. A multiple reflection layer electrode comprising:
a reflection layer on a p-type semiconductor layer;
an APL (agglomeration protecting layer) on the reflection layer so as to retard agglomeration of the reflection layer; and
a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL; a contact electrode layer between the p-type semiconductor layer and the reflection layer and reducing a contact resistance between the p-type semiconductor layer and the reflection layer.
2. The multiple reflection layer electrode of claim 1 , further comprising:
an oxidation protecting layer formed on the APL so as to retard oxidation of the APL.
3. The multiple reflection layer electrode of claim 2 , wherein the oxidation protecting layer is formed of at least one material selected from the group consisting of Au, Rh, Pd, Cu, Ni, Ru, Ir, and Pt.
4. The multiple reflection layer electrode of claim 3 , wherein the oxidation protecting layer is formed in a single layer or multiple layer structure.
5. The multiple reflection layer electrode of claim 2 , wherein a thickness of the oxidation protecting layer is about 1 nm-about 1000 nm.
6. The multiple reflection layer electrode of claim 2 , wherein a stack resultant structure composed of the reflection layer, the diffusion barrier, the APL, and the oxidation protecting layer is annealed at about 300° C.-about 600° C.
7. The multiple reflection layer electrode of claim 1 , wherein the reflection layer is a reflective ohmic contact layer.
8. The multiple reflection layer electrode of claim 1 , wherein the reflection layer is formed of one material selected from the group consisting of Ag, an Ag-based alloy, and an Ag-based oxide.
9. The multiple reflection layer electrode of claim 8 , wherein the Ag-based alloy includes at least one element selected from the solute-element group consisting of Al, Rh, Cu, Pd, Ni, Ru, Ir, and Pt.
10. The multiple reflection layer electrode of claim 1 , wherein the diffusion barrier is formed of a transparent conductive material.
11. The multiple reflection layer electrode of claim 10 , wherein the transparent conductive material includes at least one material selected from the group consisting of Ti—N, Mo—O, Ru—O, Ir—O, and In—O.
12. The multiple reflection layer electrode of claim 11 , wherein the In—O further includes at least one dopant selected from the group consisting of Sn, Zn, Ga, Cu, and Mg.
13. The multiple reflection layer electrode of claim 12 , wherein a content of a dopant added to the In—O is about 0.1-about 49 atomic %.
14. The multiple reflection layer electrode of claim 1 , wherein the APL is formed of Al or an Al-based alloy.
15. The multiple reflection layer electrode of claim 14 , wherein the Al-based alloy includes at least one element selected from the solute-element group consisting of Ag, Rh, Cu, Pd, Ni, Ru, Ir, and Pt.
16. The multiple reflection layer electrode of claim 1 , wherein the contact electrode layer is formed of at least one material selected from the group consisting of a La-based alloy, an Ni-based alloy, a Zn-based alloy, a Cu-based alloy, a thermoelectric oxide, a doped In oxide, ITO, and ZnO.
17. The multiple reflection layer electrode of claim 16 , wherein a doping element in the doped In oxide includes at least one selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.
18. The multiple reflection layer electrode of claim 16 , wherein a thickness of the contact electrode layer is about 0.1 nm-about 200 nm.
19. The multiple reflection layer electrode of claim 16 , wherein a stack resultant structure composed of the contact electrode layer, the reflection layer, the diffusion barrier, the APL, and the oxidation protecting layer is annealed at about 300° C.-about 600° C.
20. The multiple reflection layer electrode of claim 1 , wherein a thickness of each of the reflection layer, the diffusion barrier, and the APL is about 1 nm-about 1000 nm.
21. The multiple reflection layer electrode of claim 1 , wherein a stack resultant structure composed of the reflection layer, the diffusion barrier, and the APL is annealed at about 300° C.-about 600° C.
22. A compound semiconductor light emitting device comprising:
an n-type electrode;
an n-type semiconductor layer;
an active layer;
a p-type semiconductor layer; and
a p-type electrode, wherein the p-type electrode is the multiple reflection layer electrode of claim 1 .