QUANTUM DOT-METAL OXIDE COMPLEX, METHOD OF PREPARING THE SAME, AND LIGHT-EMITTING DEVICE COMPRISING THE SAME
Provided is a quantum dot-metal oxide complex including a quantum dot and a metal oxide forming a 3-dimensional network with the quantum dot. In the quantum dot-metal oxide complex, the quantum dot is optically stable without a change in emission wavelength band and its light-emitting performance is enhanced.
1 . A quantum dot-metal oxide complex comprising a quantum dot and a metal oxide forming a 3-dimensional network with the quantum dot.
2 . The quantum dot-metal oxide complex of claim 1 , wherein the quantum dot comprises a nanocrystal selected from the group consisting of silicon (Si) nanocrystal, group II-VI compound semiconductor nanocrystal, group III-V compound semiconductor nanocrystal, group IV-VI compound semiconductor nanocrystal, and compounds thereof.
3 . The quantum dot-metal oxide complex of claim 2 , wherein the group II-VI compound semiconductor nanocrystal comprises one selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe.
4 . The quantum dot-metal oxide complex of claim 2 , wherein the group III-V compound semiconductor nanocrystal comprises one selected from the group consisting of GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, and InAlPAs.
5 . The quantum dot-metal oxide complex of claim 2 , wherein the IV-VI group-based compound semiconductor nanocrystal comprises SbTe.
6 . The quantum dot-metal oxide complex of claim 1 , wherein the metal oxide comprises one selected from the group consisting of SiO 2 , TiO 2 , Al 2 O 3 , and compounds thereof.
7 . A method of preparing a quantum dot-metal oxide complex with a 3-dimensional network formed, the method comprising:
treating a surface of the quantum dot with amino-alcohol or octylamine modified poly; and
reacting the treated quantum dot with a metal oxide.
8 . The method of claim 7 , wherein the reacting of the treated quantum dot comprises:
mixing the treated quantum dot with a metal oxide; and
heating a resultant mixture of the quantum dot and the metal oxide.
9 . A light-emitting device comprising:
a light-emitting source; and
a wavelength conversion unit disposed on the light-emitting source in a light-emitting direction and including a quantum dot-metal oxide complex,
wherein the quantum dot-metal oxide complex comprises a quantum dot emitting light by absorbing light irradiated from the light-emitting source, and a metal oxide forming a 3-dimensional network with the quantum dot.
10 . The light-emitting device of claim 9 , wherein the quantum dot comprises a nanocrystal selected from the group consisting of Si nanocrystal, group II-VI compound semiconductor nanocrystal, group III-V compound semiconductor nanocrystal, group IV-VI compound semiconductor nanocrystal, and compounds thereof.
11 . The light-emitting device of claim 9 , wherein the group II-VI compound semiconductor nanocrystal comprises one selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe.
12 . The light-emitting device of claim 9 , wherein the group III-V compound semiconductor nanocrystal comprises one selected from the group consisting of GaN, GaP, GaAs, AlN, Alp, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, and InAlPAs.
13 . The light-emitting device of claim 9 , wherein the IV-VI group-based compound semiconductor nanocrystal comprises SbTe.
14 . The light-emitting device of claim 9 , wherein the metal oxide comprises one selected from the group consisting of SiO 2 , TiO 2 , Al 2 O 3 , and compounds thereof.
15 . The light-emitting device of claim 9 , wherein the light-emitting source comprises one of a light-emitting diode (LED) and a laser diode.
16 . The light-emitting device of claim 9 , wherein the wavelength conversion unit is provided in plurality.
17 . The light-emitting device of claim 16 , wherein at least two layers of the plurality of wavelength conversion units comprise quantum dots which convert the light emitted from the light-emitting source into light having different wavelengths.
18 . The light-emitting device of claim 16 , wherein:
the light-emitting source emits a blue light;
a first wavelength conversion unit among the plurality of wavelength conversion units emits a red light; and
a second wavelength conversion unit different from the first wavelength conversion unit among the plurality of wavelength conversion units emits a green light.
19 . The light-emitting device of claim 9 , further comprising:
a groove part having a bottom surface where the light-emitting source is mounted, and a side surface where a reflection part is formed; and
a support part supporting the groove part and comprising a lead frame electrically connected to the light-emitting source.
20 . The light-emitting device of claim 19 , wherein the groove part is encapsulated with an encapsulation material.
21 . The light-emitting device of claim 20 , wherein the encapsulation material comprises at least one of epoxy, silicon, acryl-based polymer, glass, carbonate-based polymer, and a mixture thereof.
22 . The light-emitting device of claim 19 , wherein the wavelength conversion unit is formed inside the groove part where the light-emitting source is mounted.