Nitride-based semiconductor device
View Patent ↗Disclosed is a nitride-based semiconductor device including a first nitride semiconductor layer doped with an n type impurity, an active layer formed on the first nitride semiconductor layer, the active layer including a plurality of quantum well layers and a plurality of quantum barrier layers alternately laminated over one another, at least one of the quantum layers being doped with the n type impurity, and a nitride semiconductor layer formed over the active layer, and doped with a p type impurity. The quantum barrier layer doped with the n type impurity includes an internal layer portion doped with the n type impurity, and an anti-diffusion film arranged at an interface of the quantum barrier layer with an adjacent one of the quantum well layers, the anti-diffusion film having an n type impurity concentration lower than that of the internal layer portion.
1. A nitride-based semiconductor device comprising:
a first nitride semiconductor layer doped with an n type impurity;
an active layer formed on the first nitride semiconductor layer, the active layer including a plurality of quantum well layers and a plurality of quantum barrier layers alternately laminated over one another, at least one of the quantum layers being doped with the n type impurity; and
a nitride semiconductor layer formed over the active layer, and doped with a p type impurity,
wherein the at least one quantum barrier layer doped with the n type impurity includes an internal layer portion doped with the n type impurity, and an anti-diffusion film arranged at an interface of the quantum barrier layer with an adjacent one of the quantum well layers, the anti-diffusion film having an n type impurity concentration lower than that of the internal layer portion.
2. The nitride-based semiconductor device according to claim 1 , wherein each of the quantum barrier layers is made of Al x1 In y1 Ga 1-x1-y1 N (x 1 +y 1 =1, 0≦x 1 ≦1, 0≦y 1 ≦1), and each of the quantum well layers is made of Al x2 In y2 Ga 1-x2-y2 N (x 2 +y 2 =1, 0≦x 2 ≦1, 0≦y 2 ≦1) having an energy band gap smaller than that of the quantum barrier layers.
3. The nitride-based semiconductor device according to claim 1 , wherein the n type impurity is at least one material selected from a group consisting of Si, Ge, and Sn.
4. The nitride-based semiconductor device according to claim 1 , wherein the n type impurity concentration of the anti-diffusion film is 50% or less of the n type impurity concentration of the doped internal layer portion in the associated quantum barrier layer.
5. The nitride-based semiconductor device according to claim 1 , wherein the n type impurity concentration of the internal layer portion in the at least one quantum barrier layer doped with the n type impurity is about 3×10 16 /cm 3 to about 3×10 9 /cm 3 .
6. The nitride-based semiconductor device according to claim 1 , wherein the anti-diffusion film in the at least one quantum barrier layer is not doped intentionally with n type impurity.
7. The nitride-based semiconductor device according to claim 1 , wherein the at least one quantum barrier layer doped with the n type impurity comprises one or both of the quantum barrier layers respectively contacting the first and second nitride semiconductor layers while having anti-diffusion films arranged at respective interfaces of the quantum barrier layers with the first and second nitride semiconductor layers.
8. The nitride-based semiconductor device according to claim 1 , wherein the at least one quantum barrier layer doped with the n type impurity comprises at least one of the quantum barrier layers each interposed between adjacent ones of the quantum well layers while having anti-diffusion films arranged at respective interfaces of the quantum barrier layer with the adjacent quantum well layers.
9. The nitride-based semiconductor device according to claim 1 , wherein the anti-diffusion film of the at least one quantum barrier layer doped with the n type impurity has a thickness corresponding to about 10% to about 40% of the thickness of the quantum barrier layer.
10. The nitride-based semiconductor device according to claim 9 , wherein:
the thickness of the at least one quantum barrier layer doped with the n type impurity is about 3 nm to about 30 nm; and
the thickness of the anti-diffusion film is about 0.3 nm to about 10 nm.
11. The nitride-based semiconductor device according to claim 1 , wherein:
the at least one quantum barrier layer doped with the n type impurity comprises two or more of the quantum barrier layers included in the active layer; and
at least one of the two or more quantum barrier layers has an n type impurity concentration different from those of the other quantum barrier layers.
12. The nitride-based semiconductor device according to claim 11 , wherein the two or more quantum barrier layers have different n type impurity concentrations, respectively, such that the quantum barrier layer contacting the first nitride semiconductor layer has a highest n type impurity concentration, and the remaining quantum barrier layers exhibit a lower n type impurity concentration at a more adjacent one thereof to the second nitride semiconductor layer.
13. The nitride-based semiconductor device according to claim 11 , wherein the anti-diffusion films of the two or more quantum barrier layers have n type impurity concentrations proportional to the concentrations and/or thicknesses of the two or more quantum barrier layers, respectively.
14. The nitride-based semiconductor device according to claim 11 , wherein the anti-diffusion films of the two or more quantum barrier layers have thicknesses proportional to the concentrations and/or thicknesses of the two or more quantum barrier layers, respectively.