Side-view light emitting diode having improved side-wall reflection structure
View Patent ↗The invention provides a side-view LED having an LED window opened to a side to emit light sideward. A pair of lead frames each act as a terminal. An LED chip is attached to a portion of the lead frame and electrically connected thereto. A package body houses the lead frames and has a concave formed around the LED chip. Also, a high reflective metal layer is formed integrally on a wall of the concave. A transparent encapsulant is filled in the concave to encapsulate the LED chip, while forming the LED window. In addition, an insulating layer is formed on a predetermined area of the lead frames so that the lead frames are insulated from the high reflective metal layer. The side-view LED of the invention enhances light efficiency and heat release efficiency with an improved side-wall reflection structure.
1. A side-view light emitting diode having a light emitting diode window opened to a side to emit light sideward, the light emitting diode comprising:
a pair of lead frames each acting as a terminal;
a light emitting diode chip attached to a portion of the lead frame and electrically connected thereto;
a package body housing the lead frames and having a concave formed around the light emitting chip, the concave acting as the light emitting diode window and the package body electrically insulating the lead frames from each other;
a high reflective metal layer formed integrally on an inner wall of the concave;
an intermediate layer between the high reflective metal layer and the inner wall of the concave;
a transparent encapsulant filled in the concave to encapsulate the LED chip, while forming the light emitting diode window; and
an insulating layer formed on a predetermined area of the lead frames so that the lead frames are insulated from the high reflective metal layer.
2. The side-view light emitting diode according to claim 1 , wherein the insulating layer is formed in a joint between the lead frames and the metal layer.
3. The side-view emitting diode according to claim 1 , wherein the insulating layer comprises one selected from a group consisting of SiO.sub.2, SiN and Al.sub.2O.sub.3 and mixtures thereof.
4. The side-view emitting diode according to claim 3 , wherein the insulating layer comprises a deposited coating.
5. The side-view emitting diode according to claim 1 , wherein the high reflective metal layer comprises one selected from a group consisting of Ag, Al, Au, Cu, Pd, Pt, Rd and alloys thereof.
6. The side-view emitting diode according to claim 5 , wherein the high reflective metal layer comprises a deposited coating.
7. The side-view emitting diode according to claim 1 , wherein the intermediate layer comprises one selected from a group consisting of SiO.sub.2, SiN and Al.sub.2O.sub.3 and mixtures thereof.
8. The side-view emitting diode according to claim 7 , wherein the intermediate layer comprises a deposited coating.
9. The side-view emitting diode according to claim 1 , further comprising a passivation film formed on the high reflective metal layer.
10. The side-view emitting diode according to claim 9 , wherein the passivation film comprises a transparent insulator.
11. The side-view emitting diode according to claim 10 , wherein the passivation film comprises one selected from a group consisting of SiO2, SiN and Al.sub.2O.sub.3 and mixtures thereof.
12. The side-view emitting diode according to claim 10 , wherein the passivation film comprises a deposited coating.
13. The side-view emitting diode according to claim 1 , wherein the package body comprises a transparent resin.