Light emitting device and method of manufacturing the same
View Patent ↗Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
1. A light emitting device comprising at least an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer which are disposed between an n-type electrode layer and a p-type electrode layer,
wherein the p-type electrode comprises first and second electrodes, each electrode having a different resistance and reflectance,
wherein the first electrode is a lanthanum nickel oxide film having a predetermined thickness, and
wherein the second electrode is a film made of a material selected from the group consisting of silver (Ag), aluminum (Al), rhodium (Rh), and tin (Sn).
2. A light emitting device comprising:
a transparent substrate;
an n-type compound semiconductor layer formed on the transparent substrate;
an active layer formed on a first region of the n-type compound semiconductor layer;
a p-type compound semiconductor layer formed on the active layer;
a contact resistance reducing film formed on the p-type compound semiconductor layer;
a p-type electrode formed on the contact resistance reducing film; and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer,
wherein the contact resistance reducing film is a lanthanum nickel oxide film, and
wherein the p-type electrode is a film made of a material selected from the group consisting of silver (Ag), aluminum (Al), rhodium (Rh), and tin (Sn).