Light emitting device having multi-pattern structure and method of manufacturing same

1. A semiconductor light emitting device having a multiple pattern structure, the semiconductor light emitting device comprising:

a substrate, and

a semiconductor layer, an active layer and an electrode layer formed on the substrate,

the multiple pattern structure comprising:

a first pattern defining a first corrugated structure on a surface of the substrate; and

a second pattern defining a second corrugated nano pattern structure on the first corrugated structure of the first pattern, a part of the second pattern contacting the semiconductor layer; and

an optically transmitting material formed in a groove of the second corrugated nano pattern structure of the second pattern, and having a different level of refractivity than that of the substrate and the semiconductor layer.

2. The semiconductor light emitting device of claim 1 , wherein the second corrugated structure of the second pattern is formed on at least one of protrusions and grooves defining the first corrugated structure of the first pattern.

3. The semiconductor light emitting device of claim 2 , wherein the second corrugated structure comprises at least one of a rectilinear corrugated structure and a curved type corrugated structure.

4. The semiconductor light emitting device of claim 2 , wherein the protrusions are curved type protrusions.

5. The semiconductor light emitting device of claim 4 , wherein the substrate is formed of a material comprising sapphire or silicon.

6. The semiconductor light emitting device of claim 4 , wherein the optical transmitting material is silicon oxide or silicon nitride.

7. The semiconductor light emitting device of claim 4 , further comprising:

a first semiconductor layer formed on the substrate;

an active layer, a second semiconductor layer and a first electrode layer sequentially formed on a first region of the first semiconductor layer; and

a second electrode layer formed on a second region of the first semiconductor layer.

8. The semiconductor light emitting device of claim 1 , wherein the first corrugated structure comprises at least one of a rectilinear corrugated structure and a curved type corrugated structure.

9. The semiconductor light emitting device of claim 1 , wherein the substrate is formed of a material comprising sapphire or silicon.

10. The semiconductor light emitting device of claim 1 , wherein the optical transmitting material is silicon oxide or silicon nitride.

11. The semiconductor light emitting device of claim 1 ,

wherein the semiconductor layer consists of first and second semiconductor layers and the electrode layer consists of first and second electrode layers, and

wherein

the first semiconductor layer is formed on the substrate,

the active layer, the second semiconductor layer and the first electrode layer are sequentially formed on a first region of the first semiconductor layer, and

the second electrode layer is formed on a second region of the first semiconductor layer.

12. A semiconductor light emitting device having a multiple pattern structure, the semiconductor light emitting device comprising:

a substrate; and

a semiconductor layer, an active layer, and an electrode layer formed on the substrate,

the multiple pattern structure comprising:

a first pattern defining a first corrugated structure on a surface of the substrate, a part of the first pattern contacting the semiconductor layer and

a second pattern defining a second corrugated nano dot pattern structures formed of an optically transmitting material having a different level of refractivity than that of the substrate and the semiconductor layer, and formed on the first corrugated structure of the first pattern.

13. The semiconductor light emitting device of claim 12 , wherein the second pattern is formed on at least one of a plurality of curved type protrusions, or between the plurality of curved type protrusions of the first pattern.

14. A method of forming a semiconductor light emitting device having a multiple pattern structure, the method comprising:

forming a first pattern defining a first corrugated structure on a surface of a substrate; and

forming a second pattern defining a second corrugated nano structure on the first corrugated structure of the first pattern;

forming an optically transmitting material in a groove of the second corrugated nano pattern structure of the second pattern, to expose a part of the second pattern;

forming a semiconductor layer on the first and second patterns, wherein the semiconductor layer is formed to contact the second pattern,

wherein the optical transmitting material has a different level of refractivity than that of the substrate and the semiconductor layer.

15. The method of claim 14 , wherein the forming the second pattern defining a second corrugated structure is formed on at least one of protrusions and grooves defining the first corrugated structure of the first pattern.

16. The method of claim 15 , wherein the forming the second pattern defining a second corrugated structure comprises forming at least one of a rectilinear corrugated structure and a curved type corrugated structure.

17. The method of claim 14 , wherein the forming the first pattern defining a first corrugated comprises forming at least one of a rectilinear corrugated structure and a curved type corrugated structure.

18. The method of claim 14 , further comprising forming the substrate of a material comprising sapphire or silicon.

19. The method of claim 14 , wherein the forming the second pattern includes nano pattern structures formed of an optical transmitting material on at least one of protrusions and grooves defining the first corrugated structure of the first pattern.

20. The method of claim 19 , wherein the optical transmitting material is silicon oxide or silicon nitride.