Modifying a semiconductor device to provide electrical parameter monitoring
View Patent ↗A method of modifying a semiconductor device to provide electrical parameter monitoring. The device includes a semiconductor die and a package substrate. The substrate includes a conductive plane. The die is connected to the plane via a plurality of connection structures. The method includes disconnecting a first one of the connection structures from the plane, and connecting the first connection structure to an external package connection, thereby providing a capability to monitor an electrical parameter of the die via the external package connection.
1. A method of modifying a semiconductor device to provide electrical parameter monitoring, the device including a semiconductor die and a package substrate, the substrate including a conductive plane, the die connected to the plane via a plurality of connection structures, each of the connection structures separately connecting the die to the plane, the method comprising:
(a) disconnecting a first one of the connection structures from the plane, wherein the disconnected first connection structure remains connected to a power pad or ground pad of the die; and
(b) connecting the disconnected first connection structure to an external package connection of the semiconductor device, thereby providing a capability to monitor an electrical parameter of the die via the external package connection.
2. The method of claim 1 , wherein the conductive plane is a power plane.
3. The method of claim 2 , wherein the power plane is coupled to power pads of the die via the plurality of connection structures, and is coupled to a plurality of power external package connection structures.
4. The method of claim 1 , wherein the conductive plane is a ground plane.
5. The method of claim 4 , wherein the ground plane is coupled to ground pads of the die via the plurality of connection structures, and is coupled to a plurality of ground external package connection structures.
6. The method of claim 1 , wherein the plurality of connection structures are bond wires.
7. The method of claim 1 , wherein the external package connection is a solder structure.
8. The method of claim 1 , wherein the electrical parameter is an internal voltage of the die.
9. The method of claim 1 , wherein the package substrate includes a plurality of conductive planes, and wherein the die is connected to each plane via a plurality of connection structures, the method further comprising:
repeating steps (a) and (b) for each of the conductive planes.
10. A method of measuring an electrical parameter of a semiconductor die, the method comprising:
(a) providing a semiconductor device including a semiconductor die and a package substrate, the substrate including a conductive plane, the die connected to the plane via a plurality of internal package connection structures, each of the internal package connection structures separately connecting the die to the plane;
(b) disconnecting a first one of the internal connection structures from the plane, wherein the disconnected first internal connection structure is connected to a power pad or ground pad of the die;
(c) connecting the disconnected first internal connection structure to a first external package connection structure of the semiconductor device; and
(d) measuring an electrical parameter of the die at the first external connection structure.
11. The method of claim 10 , wherein the conductive plane is a power plane.
12. The method of claim 10 , wherein the conductive plane is a ground plane.
13. The method of claim 11 , wherein the power plane is coupled to power pads of the die via the plurality of internal package connection structures, and is coupled to a plurality of power external package connection structures.
14. The method of claim 12 , wherein the ground plane is coupled to ground pads of the die via the plurality of internal package connection structures, and is coupled to a plurality of ground external package connection structures.
15. The method of claim 10 , wherein the plurality of internal package connection structures are bond wires.
16. The method of claim 10 , wherein the first external package connection structure is a solder structure.
17. The method of claim 10 , wherein the electrical parameter is an internal voltage of the die.
18. The method of claim 10 , wherein the package substrate includes a plurality of conductive planes, and wherein the die is connected to each plane via a plurality of internal package connection structures, the method further comprising:
repeating at least steps (b) and (c) for each of the conductive planes.