Proximity effect correction apparatus, proximity effect correction method, storage medium, and computer program product
View Patent ↗Light intensity values only of the vicinity of a specified portion, that is, for example, based on a prescribed value, an area where the distance between edges of an object to be corrected is equal to or shorter than the prescribed value are calculated, and the object to be corrected is corrected based on the light intensity values.
1. A proximity effect correction method for correcting a mask design object to correct a proximity effect of a mask pattern to be formed on a substrate by lithography, comprising the steps of:
judging, based on a determination that a distance between object sides of mask design objects is equal to or shorter than a prescribed distance, the mask design object as a portion to be corrected;
calculating light intensity values at the portion to be corrected within a range prescribed in accordance with a resolution limit of the lithography; and
calculating a moving amount of the object side of the mask design object based on the light intensity values.
2. The proximity effect correction method according to claim 1 ,
wherein the range of the light intensity values to be calculated is within a radius represented by the following equation:
κ·λ/N A ,
where κ indicates a real number from 0.1 to 0.3, λ indicates exposure wave length, and N A indicates the number of openings.
3. The proximity effect correction method according to claim 1 ,
wherein the moving amount is calculated to minimize a distance between a light intensity contour line obtained by the calculated light intensity values and a pattern side of a target mask pattern.
4. The proximity effect correction method according to claim 1 ,
wherein the moving amount is calculated to minimize an error in light intensity calculated from the light intensity values and a light intensity value of a target mask pattern.
5. A proximity effect correction apparatus for correcting a mask design object to correct a proximity effect of a mask pattern to be formed on a substrate by lithography, comprising:
a determiner for judging, based on a determination that a distance between object sides of mask design objects is equal to or shorter than a prescribed distance, the mask design object as a portion to be corrected;
a calculator for calculating light intensity values at the portion to be corrected within a range prescribed in accordance with a resolution limit of the lithography; and
a calculator for calculating a moving amount of the object side based on the light intensity values.
6. The proximity effect correction apparatus according to claim 5 ,
wherein the range of the light intensity values to be calculated is within a radius represented by the following equation:
κ·λ/N A ,
where κ indicates a real number from 0.1 to 0.3, λ indicates exposure wave length, and N A indicates the number of openings.
7. The proximity effect correction apparatus according to claim 5 ,
wherein the moving amount is calculated to minimize a distance between a light intensity contour line obtained by the calculated light intensity values and a pattern side of a target mask pattern.
8. The proximity effect correction apparatus according to claim 5 ,
wherein the moving amount is calculated to minimize an error in light intensity calculated from the light intensity values and a light intensity value of a target mask pattern.
9. A computer readable storage medium for use in a computer, the computer readable storage medium encoded with a computer program product for correcting a mask design object by correcting a proximity effect of a mask pattern to be formed on a substrate by lithography, the computer program causing the computer to execute a method comprising:
judging, based on a determination that a distance between object sides of mask design objects is equal to or shorter than a prescribed distance, the mask design object as a portion to be corrected;
calculating light intensity values at the portion to be corrected within a range prescribed in accordance with a resolution limit of the lithography; and
calculating a moving amount of the object side of the mask design object based on the light intensity values.
10. The computer readable storage medium according to claim 9 ,
wherein the range of the light intensity values to be calculated is within a radius represented by the following equation:
κ·λ/N A ,
where κ indicates a real number from 0.1 to 0.3, λ indicates exposure wave length, and N A indicates the number of openings.
11. The computer readable storage medium according to claim 9 ,
wherein the moving amount is calculated to minimize a distance between a light intensity contour line obtained by the calculated light intensity values and a pattern side of a target mask pattern.
12. The computer readable storage medium according to claim 9 ,
wherein the moving amount is calculated to minimize an error in light intensity calculated from the light intensity values and a light intensity value of a target mask pattern.
13. A computer program product comprising a computer usable medium having computer readable program code means embodied in said medium for correcting a proximity effect of a mask pattern to be formed on a substrate by lithography, said computer readable program code means comprising:
a first computer readable program code means for judging, based on a determination that a distance between object sides of mask design objects is equal to or shorter than a prescribed distance, the mask design object as a portion to be corrected;
a second computer readable program code means for calculating light intensity values at the portion to be corrected within a range prescribed in accordance with a resolution limit of the lithography; and
a third computer readable program code means for calculating a moving amount of the object side of the mask design object based on the light intensity values.
14. The computer program product according to claim 13 ,
wherein the range of the light intensity values to be calculated is within a radius represented by the following equation:
κ·λ/N A ,
where κ indicates a real number from 0.1 to 0.3, λ indicates exposure wave length, and N A indicates the number of openings.
15. The computer program product according to claim 13 ,
wherein said third computer readable program code means calculates the moving amount to minimize a distance between a light intensity contour line obtained by the calculated light intensity values and a pattern side of a target mask pattern.
16. The computer program product according to claim 13 , wherein said third computer readable program code means calculates the moving amount to minimize an error in light intensity calculated from the light intensity values and a light intensity value of a target mask pattern.