Guard ring structure and method for fabricating same
View Patent ↗A method for fabricating a guard ring structure for JFETs and MESFETs. Trenches are etched in a semiconductor substrate for fabrication of a gate structure for a JFET or MESFET. At time the gate trenches are etched, concentric guard ring trenches are also etched. The process used to fabricate the gate p-h junction or Schottky barrier at the bottom of the gate trenches is also used to fabricate the guard ring at bottom of the guard ring trenches. The separation between the guard ring trenches is 1.0 to 3.0 times greater than the separation between the gate trenches.
1. A field effect transistor (FET) comprising:
a semiconductor substrate comprising a top surface and a bottom surface, wherein the top and bottom surfaces each comprise a heavily doped layer to provide an ohmic contact;
a plurality of gate trenches formed in the top surface, each comprising a bottom, wherein a gate is disposed on the bottom of said gate trenches, forming a barrier junction, wherein said gate trenches are separated by a width W 1 ;
a plurality of guard ring trenches formed in the top surface with a depth approximately equal to the depth of said gate trenches, each comprising a bottom,, wherein a guard ring is disposed on the bottom of said guard ring trenches, forming a barrier junction, wherein said guard ring trenches are separated by a width W 2 that is greater than W 1 ;
a plurality of source regions on said top surface substantially surrounded by said gate trenches;
a source contact disposed on the source regions; and,
a drain contact disposed on the bottom surface of said substrate.
2. The FET of claim 1 , wherein said barrier junction is a Schottky barrier.
3. The FET of claim 1 , wherein said barrier junction is a p-n junction.
4. The FET of claim 1 , wherein said width W 2 is 1.0 to 3.0 times greater than said width W 1 .
5. The FET of claim 1 , wherein said FET is a junction field effect transistor (JFET).
6. A field effect transistor (FET) comprising:
a substrate comprising top and bottom surfaces, each comprising a doped layer;
a plurality of gate trenches formed in the top surface, each gate trench comprising a bottom, wherein a gate is disposed on said trench bottom, forming a barrier junction at an interface with said substrate, and wherein said plurality of gate trenches are separated by a width, W 1 ;
a plurality of guard ring trenches formed in the top surface with a depth approximately equal to the depth of said gate trenches, each guard ring trench comprising a bottom, wherein a guard ring is disposed on the bottom of said guard ring trenches, forming a barrier junction at the interface with said substrate, wherein said guard ring trenches are separated by a width W 2 that is greater than W 1 ;
a plurality of source regions on said top surface;
a source contact; and
a drain contact.
7. The FET of claim 6 , wherein said barrier junction is a Schottky barrier.
8. The FET of claim 6 , wherein said barrier junction is a p-n junction.
9. The FET of claim 6 , wherein said width W 2 is 1.0 to 3.0 times greater than said width % W 1 .
10. The FET of claim 9 , wherein said width W 2 is 1.4 to 1.6 times greater than said width % W 1 and said substrate comprises silicon.
11. The FET of claim 6 , wherein said FET is a junction field effect transistor (JFET).
12. The FET of claim 6 , wherein said FET is a metal-semiconductor field effect transistor (MESFET).
13. The FET of claim 6 , further comprising an additional guard ring trench separated from said plurality of guard ring trenches by a width W 3 , wherein W 3 is different from W 2 .
14. The FET of claim 6 , wherein said substrate comprises an n-type semiconductor.
15. The FET of claim 6 , wherein said substrate comprises a p-type semiconductor.
16. The FET of claim 6 , wherein said FET is an enhancement mode device.
17. The FET of claim 6 , wherein said FET is a depletion mode device.