IP Library Granted Patent US 7,492,019
Granted Patent B2
US 7,492,019 · App. 10/383,814 · Granted Feb 17, 2009

Micromachined assembly with a multi-layer cap defining a cavity

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Quick Facts
Patent No.
US 7,492,019
App. No.
10/383,814
Granted
Feb 17, 2009
Kind
B2
Abstract

This invention comprises a process for fabricating a micro mechanical structure in a sealed cavity having a multi-layer high stiffness cap. The high stiffness material used for the cap protects the underlying microstructure from destructive environmental forces inherent in the packaging process and from environmental damage.

Claims (12)

1. A MEM device comprising:

a substrate;

a microstructure formed on said substrate; and

a high-stiffness thin-film cap structure forming at least one wall of a sealed cavity encapsulating said microstructure, having a thickness between about 5 and 50 μm, and a Young's modulus of at least about 80 GPa.

2. The MEMS device of claim 1 , wherein the thin-film cap structure comprises a cap layer and a cap over-layer including one or more additional layers of high-stiffness material.

3. The MEMS device of claim 2 , wherein the cap layer comprises a high-stiffness material deposited in the presence of a first bias voltage.

4. The MEMS device of claim 2 , wherein a first layer of the one or more additional layers of the cap over-layer comprises a high-stiffness material deposited in the absence of a bias voltage.

5. The MEMS device of claim 2 , wherein a second layer of the one or more additional layer of the cap over-layer comprises a high-stiffness material deposited in the presence of a second bias voltage, the thin-film cap structure constructed using thin-film deposition technologies.

6. The MEMS device of claim 1 further comprising an outer seal layer, said outer seal layer covering the outermost layer of high-stiffness cap structure.

7. The MEMS device of claim 1 wherein said high-stiffness material is selected from a group consisting of ionic bonded materials, covalently bonded material and or mixed ionic and covalently bonded materials.

8. The MEMS device of claim 1 wherein said one or more layers of high-stiffness material can withstand pressures above 600 psi and temperatures up to 300degrees C. when the total thickness of all deposited layers is less than approximately 50 microns.

9. The MEMS device of claim 1 wherein said one or more layers of high-stiffness material can withstand a uniform pressure of unto 60 atmospheres without deflecting more than one micron from its original position.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2010
From: SILICON VALLEY BANK; GOLD HILL VENTURE LENDING 03, LP
To: CYMATICS LABORATORIES CORPORATION
Reel/Frame 024140/0390 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2010
From: RESONANCE SEMICONDUCTOR CORPORATION
To: SILICON VALLEY BANK; GOLD HILL VENTURE LENDING 03, LP
Reel/Frame 024140/0374 →
SECURITY AGREEMENT Recorded Mar 25, 2010
From: RENAISSANCE WIRELESS CORPORATION
To: SILICON VALLEY BANK; GOLD HILL VENTURE LENDING 03, LP
Reel/Frame 024128/0928 →
CHANGE OF NAME Recorded Mar 25, 2010
From: RENAISSANCE WIRELESS CORPORATION
To: RESONANCE SEMICONDUCTOR CORPORATION
Reel/Frame 024140/0065 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 13, 2009
From: IC MECHANICS, INC.
To: MORGENTHALER PARTNERS VII, L.P.
Reel/Frame 022248/0514 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 13, 2009
From: MORGENTHALER PARTNERS VII, L.P.
To: RESONANCE SEMICONDUCTOR CORPORATION
Reel/Frame 022248/0883 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2007
From: CARLEY, L. RICHARD
To: IC MECHANICS, INC.
Reel/Frame 019056/0255 →