IP Library Granted Patent US 7,275,292
Granted Patent B2
US 7,275,292 · App. 10/384,199 · Granted Oct 2, 2007

Method for fabricating an acoustical resonator on a substrate

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Quick Facts
Patent No.
US 7,275,292
App. No.
10/384,199
Granted
Oct 2, 2007
Kind
B2
Abstract

Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Claims (57)

1. A method for fabricating an acoustical resonator on a substrate having a top surface, said method comprising steps of:

a) generating a depression in said top surface;

b) filling said depression with a sacrificial material, said filled depression having an upper surface level with said top surface of said substrate;

c) depositing a first electrode on said upper surface;

d) depositing a layer of piezoelectric material on said first electrode; and

e) depositing a second electrode on said layer of piezoelectric material using a mass load lift-off process; wherein the mass load lift-off process utilizes a mass load pattern and a mass load.

2. The method of claim 1 further comprising:

depositing a passivation layer for protecting the second electrode.

3. The method of claim 1 wherein the step of depositing a second electrode on said layer of piezoelectric includes

depositing conductive material;

depositing an AlN layer;

applying a mass load layer;

applying a photoresist layer over at least one shunt resonator;

etching the mass lead layer and AlN layer to form the second electrode leaving the mass lead layer over the shunt resonator.

4. The method of claim 1 wherein the step of depositing a first electrode on said tipper surface comprises the steps of:

depositing a seed layer;

depositing a conductive material;

applying a patterned mask; and

etching the conductive material and seed layer in accordance with the patterned mask to form a bottom electrode.

5. The method of claim 4 further comprising the steps of:

applying a lift-off pattern;

depositing lift-off conductive material for bond pads;

lifting off the conductive material leaving bond pads; and

releasing material from swimming pool.

6. The method of claim 1 wherein the step of depositing a second electrode on said layer of piezoelectric comprises the steps of:

depositing conductive material;

applying the mass load pattern;

depositing the mass load;

lifting off the mass load;

applying a patterned mask; and

etching conductive material in accordance with the patterned mask to form the second electrode.

7. The method of claim 1 wherein the step of depositing a second electrode on said layer of piezoelectric comprises the steps of:

depositing conductive material;

applying the muss load pattern;

depositing the mass load;

lifting off the mass load;

depositing a hard mask layer;

etching the hard mask layer;

etching the conductive material in accordance with the hard mask to form the second electrode.

8. The method of claim 1 further comprising the steps of:

etching the piezoelectric layer.

9. A method for fabricating an acoustical resonator on a substrate having a top surface, said method comprising steps of:

forming a swimming pool in the substrate;

forming a bottom electrode;

forming a piezoelectric layer;

forming a top electrode by

depositing a conductive material;

applying a mass load pattern;

depositing a mass load;

lifting off the mass load;

applying a patterned mask; and

etching conductive material in accordance with the patterned mask to form the top electrode.

10. A method for fabricating a shunt acoustical resonator and a series acoustical resonator on a substrate having a top surface, said method comprising:

forming the shunt acoustical resonator;

forming the series acoustical resonator;

utilizing mass loading to lower the frequency of the shunt resonator relative to the series resonator.

11. The method or claim 10 wherein utilizing mass loading to lower the frequency of the shunt resonator relative to the series resonator includes adding mass to the shunt resonator to differentiate the frequency of the shunt resonator from the frequency of the series resonator.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE PREVIOUSLY RECORDED AT REEL: 047196 FRAME: 0097. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 6, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 048555/0510 →
MERGER Recorded Oct 4, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047196/0097 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME PREVIOUSLY RECORDED AT REEL: 017206 FRAME: 0666. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded May 6, 2016
From: AGILENT TECHNOLOGIES, INC.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 038632/0662 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →