Semiconductor component having encapsulated, bonded, interconnect contacts
View Patent ↗A semiconductor component includes a die having a pattern of die contacts, and interconnect contacts bonded to the die contacts and encapsulated in an insulating layer. The component also includes terminal contacts formed on tip portions of the interconnect contacts. Alternately the component can include conductors and bonding pads in electrical communication with the interconnect contacts configured to redistribute the pattern of the die contacts. A method for fabricating the component includes the steps of forming the interconnect contacts on the die contacts, and forming the insulating layer on the interconnect contacts while leaving the tip portions exposed. The method also includes the step of forming the terminal contacts on the interconnect contacts, or alternately forming the conductors and bonding pads in electrical communication with the interconnect contacts and then forming the terminal contacts on the bonding pads.
1. A semiconductor component comprising:
a semiconductor die comprising a plurality of die contacts;
a plurality of interconnect contacts bonded to the die contacts;
an insulating layer on the die substantially encapsulating the interconnect contacts;
a plurality of conductors on the die in physical contact with the interconnect contacts configured to redistribute a pattern of the die contacts; and
a plurality of terminal contacts on the die in electrical communication with the conductors.
2. The component of claim 1 wherein each interconnect contact includes a metallization layer in physical contact with a conductor.
3. The component of claim 1 wherein the terminal contacts comprise metal bumps or balls.
4. The component of claim 1 wherein the interconnect contacts comprise an element selected from the group consisting of posts, studs, bumps, balls and ribbons.
5. The component of claim 1 wherein the interconnect contacts comprise metal posts having a diameter of from 1 μm to 300 μm.
6. The component of claim 1 wherein the interconnect contacts comprise wire bonded wires.
7. The component of claim 1 wherein the interconnect contacts comprise severed wires.
8. A semiconductor component comprising:
a semiconductor die comprising a plurality of die contacts;
a plurality of interconnect contacts bonded to the die contacts having tip portions and a height;
an insulating layer on the die substantially encapsulating the interconnect contacts and having a thickness less than the height;
a plurality of conductors on the insulating layer in physical contact with the tip portions configured to redistribute a pattern of the die contacts; and
a plurality of terminal contacts on the insulating layer in electrical communication with the conductors.
9. The component of claim 8 wherein the interconnect contacts comprise an element selected from the group consisting of posts, studs, bumps, balls and ribbons.
10. The component of claim 8 wherein the interconnect contacts comprise metal posts having a diameter of from 1 μm to 300 μm.
11. The component of claim 8 wherein the interconnect contacts comprise wire bonded wires.
12. The component of claim 8 wherein the interconnect contacts comprise severed wires.
13. The component of claim 8 wherein the conductors include bonding pads for the terminal contacts.
14. The component of claim 8 wherein the conductors include metallization layers for the terminal contacts.
15. The component of claim 8 wherein the terminal contacts comprise metal bumps or balls.
16. The component of claim 8 wherein the die contacts have a first pitch and the terminal contacts have a second pitch.
17. The component of claim 8 wherein the terminal contacts are arranged in a dense area array.
18. The component of claim 8 further comprising a second insulating layer on the conductors and the terminal contacts configured to insulate the conductors and rigidify the terminal contacts.
19. The component of claim 8 further comprising an outer insulating layer on the conductors.
20. A semiconductor component comprising:
a semiconductor die comprising a plurality of die contacts;
a plurality of metal posts comprising base portions bonded to the die contacts and tip portions;
an insulating layer on the die encapsulating the base portions but not the tip portions;
a plurality of conductors on the insulating layer in electrical communication with the tip portions configured to redistribute a pattern of the die contacts; and
a plurality of terminal contacts on the insulating layer in electrical communication with the conductors.
21. The component of claim 20 wherein the terminal contacts comprise metal bumps or balls in a grid array.
22. The component of claim 20 wherein the insulating layer comprises a cured polymer.
23. The component of claim 20 wherein the metal posts comprise a metal selected from the group consisting of Au, Pd, Ag, Cu, Ni and alloys of these metals.
24. A semiconductor component comprising:
a semiconductor die comprising a plurality of die contacts having a first pattern;
a plurality of metal posts comprising base portions bonded to the die contacts and tip portions;
an insulating layer on the die encapsulating the base portions but not the tip portions;
a plurality of conductors on the insulating layer in physical contact with the tip portions configured to redistribute the first pattern; and
a plurality of terminal contacts on the insulating layer in electrical communication with the conductors having a second pattern.
25. The component of claim 24 wherein the conductors include bonding pads for the terminal contacts.
26. The component of claim 24 wherein the conductors include metallization layers for the terminal contacts.
27. The component of claim 24 wherein the terminal contacts comprise metal bumps or balls in a ball grid array.
28. The component of claim 24 wherein the insulating layer comprises a cured polymer.
29. The component of the claim 24 wherein the metal posts comprise a metal selected from the group consisting of Au, Pd, Ag, Cu, Ni and alloys of these metals.