Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor
View Patent ↗The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
1. A method for preparation of a thin-film transistor, comprising the steps of:
forming an amorphous silicon film;
annealing the formed amorphous silicon film to form a polysilicon film; and
evaluating a linearity and/or periodicity of a spatial structure of a film surface of the polysilicon film to evaluate a state of the polysilicon film based on result of evaluation of linearity and/or periodicity;
wherein, in said evaluating step, a surface image of the polysilicon film is photographed and an autocorrelation of the surface image is found to evaluate the linearity and/or periodicity of the spatial structure of the film surface.
2. A method for preparation of a thin-film transistor, comprising the steps of:
forming an amorphous silicon film;
annealing the formed amorphous silicon film to form a polysilicon film; and
evaluating a linearity and/or periodicity of a spatial structure of a film surface of the polysilicon film to evaluate a state of the polysilicon film based on a result of evaluation of linearity and/or periodicity;
wherein, in said evaluating step, a UV laser is illuminated on said polysilicon film to photograph a surface image of said polysilicon film to perform evaluation based on the photographed surface image.
3. A method for preparation of a thin-film transistor having a step of forming a polysilicon film serving as a channel layer by laser annealing an amorphous silicon film by an excimer laser annealing device, comprising the steps of:
forming a gate electrode on a substrate;
forming an amorphous silicon film on the substrate on which said gate electrode has been formed;
laser annealing said amorphous silicon films on plural substrates or plural locations of said amorphous silicon film on a sole substrate to form a polysilicon film;
evaluating the linearity and/or periodicity of a spatial structure of a surface of said polysilicon film formed on the gate electrode on said substrate;
evaluating the linearity and/or periodicity of the spatial structure of the surface of said polysilicon film formed on locations other than the gate electrode on said substrate;
calculating the manufacturing margin of said polysilicon film in the laser annealing based on the linearity and/or periodicity of said spatial structure of the polysilicon film surface formed on said gate electrode and on the linearity and/or periodicity of the polysilicon film surface formed on a location other than said gate electrode; and
setting the laser power of said excimer laser annealing device based on said manufacturing margin.
4. A method for preparation of a thin-film transistor of a bottom gate structure in which a gate electrode is formed between a substrate and a polysilicon film, comprising the steps of:
forming a gate electrode on said substrate;
forming an amorphous silicon film on said substrate on which said gate electrode has been formed;
laser annealing said amorphous silicon film to form a polysilicon film; and
checking the acceptability of said polysilicon film based on a spatial structure of the surface of said polysilicon film;
said checking step comprising:
evaluating the linearity and/or periodicity of the spatial structure of the surface of said polysilicon film formed on said gate electrode of each substrate;
evaluating the linearity and/or periodicity of tile spatial structure of the surface of said polysilicon film formed on a location other than said gate electrode of each substrate; and
checking the acceptability of said polysilicon film based on the linearity and/or periodicity of the spatial structure of the surface of said polysilicon film formed on said gate electrode or on the linearity and/or periodicity of the spatial structure of the surface of said polysilicon film formed on a location other than said gate electrode.