Field effect transistor with metal oxide gate insulator and sidewall insulating film
View Patent ↗Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.
1. A semiconductor device comprising:
a silicon substrate;
a gate insulator disposed on the silicon substrate and containing a metal oxide;
a gate electrode disposed on the gate insulator; and
a sidewall insulating film covering a side surface of the gate insulator and a side surface of the gate electrode and containing aluminum, silicon, oxygen and nitrogen.
2. The device according to claim 1 , wherein at least a part of the sidewall insulating film has a composition represented by a general formula:
Si 6−z Al z O z N 8−z
where z is a value larger than 0 and smaller than 6.
3. The device according to claim 1 , wherein a sum of concentrations of aluminum, silicon, oxygen and nitrogen in the sidewall insulating film is equal to or larger than 97 atomic %.
4. The device according to claim 1 , wherein a thickness of the sidewall insulating film in a direction parallel to a main surface of the silicon substrate falls within a range from 3 nm to 10 nm.
5. The device according to claim 1 , wherein a concentration of aluminum in the sidewall insulating film is equal to or larger than 10 atomic %, and a concentration of nitrogen in the sidewall insulating film is equal to or larger than 5 atomic %.
6. The device according to claim 1 , wherein a material of the gate insulator is silicate of the metal oxide and silicon dioxide, and the metal oxide contains as a constituent metal element thereof at least one metal element selected from the group consisting of zirconium, hafnium, lanthanum, cerium, titanium, yttrium, tantalum, bismuth and praseodymium.
7. The device according to claim 1 , wherein the gate insulator consists essentially of the metal oxide, and the metal oxide contains as a constituent metal element thereof at least one metal element selected from the group consisting of zirconium, hafnium, lanthanum, cerium, titanium, yttrium, tantalum, bismuth and praseodymium.
8. A semiconductor device comprising:
a silicon substrate;
a gate insulator disposed on the silicon substrate and containing a metal oxide;
a gate electrode disposed on the gate insulator; and
a sidewall insulating film covering a side surface of the gate insulator and a side surface of the gate electrode and having a network structure constructed by aluminum, silicon, oxygen and nitrogen.
9. The device according to claim 8 , wherein at least a part of the sidewall insulating film has a composition represented by a general formula:
Si 6−z Al z O z N 8−z
where z is a value larger than 0 and smaller than 6.
10. The device according to claim 8 , wherein a sum of concentrations of aluminum, silicon, oxygen and nitrogen in the sidewall insulating film is equal to or larger than 97 atomic %.
11. The device according to claim 8 , wherein a thickness of the sidewall insulating film in a direction parallel to a main surface of the silicon substrate falls within a range from 3 nm to 10 nm.
12. The device according to claim 8 , wherein a concentration of aluminum in the sidewall insulating film is equal to or larger than 10 atomic %, and a concentration of nitrogen in the sidewall insulating film is equal to or larger than 5 atomic %.
13. The device according to claim 8 , wherein a material of the gate insulator is silicate of the metal oxide and silicon dioxide, and the metal oxide contains as a constituent metal element thereof at least one metal element selected from the group consisting of zirconium, hafnium, lanthanum, cerium, titanium, yttrium, tantalum, bismuth and praseodymium.
14. The device according to claim 8 , wherein the gate insulator consists essentially of the metal oxide, and the metal oxide contains as a constituent metal element thereof at least one metal element selected from the group consisting of zirconium, hafnium, lanthanum, cerium, titanium, yttrium, tantalum, bismuth and praseodymium.