Patent Assignment
Reel/Frame 041333/0955
Assignment of Assignor's Interest
Recorded: 2017-01-11
Pages: 13
Assignor
TOSHIBA CORPORATION
Executed: 2016-10-20
Assignee
MICROSOFT TECHNOLOGY LICENSING, LLC
ONE MICROSOFT WAY, REDMOND, WASHINGTON, 98052
Covered Properties
(97)
Instruction Cache Memory Includes a Clock Gate Circuit for Selectively Suppling a Clock Signal to Tag Ram to Reduce Power Consumption
Patent:
6,345,336 →
Application:
09/478,827 →
Mos Transistor Having a Tensile-Strained Si Layer and a Compressive-Strained Si-Ge Layer
Patent:
6,310,367 →
Application:
09/510,239 →
Semiconductor Device Having a Gate Insulating Film Structure Including an Insulating Film Containing Metal, Silicon and Oxygen and Manufacturing Method Thereof
Manufacturing Method of Cmos Devices
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device and Method for Manufacturing Semiconductor Device
Semiconductor Device
Semiconductor Device and Its Manufacturing Method
Method for Manufacturing a Semiconductor Device
Field Effect Transistor with Metal Oxide Gate Insulator and Sidewall Insulating Film
Semiconductor Device and Method of Manufacturing Semiconductor Device
Method of Manufacturing Semiconductor Device
Fin Semiconductor Device and Method for Fabricating the Same
Semiconductor Device and Manufacturing Method Therefor
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device and Method for Manufacturing Semiconductor Device
Semiconductor Device Having a Gate Insulating Film Structure Including an Insulating Film Containing Metal, Silicon and Oxygen and Manufacturing Method Thereof
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device and Method of Fabricating the Same
Semiconductor Manufacturing Method and Semiconductor Device
Mosfet-Type Semiconductor Device, and Method of Manufacturing the Same
Method of Forming an Insulating Film, Method of Manufacturing a Semiconductor Device, and Semiconductor Device
Electronic Circuit and Electronic Device
Semiconductor Device Having a Fin and Method of Manufacturing the Same
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device and Method of Manufacturing Semiconductor Device
Semiconductor Device and Method of Manufacturing Semiconductor Device
Semiconductor Device Fabrication Method
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device and Method of Manufacturing Semiconductor Device
Semiconductor Device and Method for Manufacturing Semiconductor Device
Fin Semiconductor Device and Method for Fabricating the Same
Semiconductor Device with Misfet
Metal Insulator Semiconductor Field Effect Transistor Having Fin Structure
Semiconductor Device and Method Manufacturing Semiconductor Device
Semiconductor Device
Semiconductor Device Having a Pole-Shaped Portion and Method of Fabricating the Same
Cmos Semiconductor Device
Semiconductor Device and Method of Manufacturing the Same
Semiconductor Device and Method for Manufacturing Semiconductor Device
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device Having Fins Fet and Manufacturing Method Thereof
Semiconductor Device Having a Gate Insulating Film Structure Including an Insulating Film Containing Metal, Silicon and Oxygen and Manufacturing Method Thereof
Method of Manufacturing Semiconductor Device
Semiconductor Memory Device
Programmable Element and Manufacturing Method of Semiconductor Device
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device with Fin and Silicide Structure
Semiconductor Wafer, Semiconductor Device and Method of Fabricating the Same
Electronic Circuit and Electronic Device
Semiconductor Device Including Sram
Fin Transistor
Esd Protection Semiconductor Device Having an Insulated-Gate Field-Effect Transistor
Semiconductor Device, Capacitor, and Field Effect Transistor
Semiconductor Device with Misfet
Semiconductor Device and Manufacturing Methods with Using Non-Planar Type of Transistors
Semiconductor Device and Method for Manufacturing the Same
Method of Manufacturing Semiconductor Device and Semiconductor Device
Multiple Thickness and/or Composition High-K Gate Dielectrics and Methods of Making Thereof
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device Having a Gate Insulating Film Structure Including an Insulating Film Containing Metal, Silicon and Oxygen and Manufacturing Method Thereof
Semiconductor Device
Semiconductor Device and Method for Manufacturing Same
Semiconductor Device and Method of Manufacturing Semiconductor Device
Method of Manufacturing Semiconductor Device
Method of Manufacturing a Semiconductor Device
Semiconductor Device and Method of Manufacturing the Same
Semiconductor Manufacturing Method and Semiconductor Device
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device Comprising Fully-Depleted and Partially-Depleted Finfets
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and Method of Manufacturing the Same
Method for Fabricating Semiconductor Device
Semiconductor Storage Device
Semiconductor Device and Method of Manufacturing Semiconductor Device
Method of Manufacturing Semiconductor Device and Semiconductor Device
Semiconductor Manufacturing Method and Semiconductor Device
Semiconductor Device and Method of Manufacturing Semiconductor Device
Semiconductor Device
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and Method for Manufacturing Same
Integrated Circuit Device and Method for Manufacturing Same
Method for Manufacturing Semiconductor Device
Semiconductor Device and Method of Manufacturing the Same
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and Manufacturing Method of Semiconductor Device
Finfet Comprising a Punch-Through Stopper
Patent:
8,610,201 →
Application:
13/587,327 →
Needle-Shaped Profile Finfet Device
Fin-Fet with Mechanical Stress of the Fin Perpendicular to the Substrate Direction
Semiconductor Device and Method for Manufacturing Same
Semiconductor Device
Multigate Dual Work Function Device and Method for Manufacturing Same
Integrated Circuit Device and Method for Manufacturing Same
Semiconductor Device
Semiconductor Device and Its Manufacturing Method
Application:
14/681,845 →
Related Assignments
(10)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Sep 25, 2001
From: MATSUO, KOUJI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 012222/0014 →
Assignment of Assignor's Interest
Jun 11, 2003
From: SUGIYAMA, NAOHARU; TEZUKA, TSUTOMU; MIZUNO, TOMOHISA; TAKAGI, SHINICHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 014163/0633 →
Assignment of Assignor's Interest
Jul 1, 2003
From: YAMAGUCHI, TAKESHI; SATAKE, HIDEKI; FUKUSHIMA, NOBURU
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 014226/0526 →
Assignment of Assignor's Interest
Feb 6, 2004
From: KOIKE, MASAHIRO; KOYAMA, MASATO; INO, TSUNEHIRO; KAMIMUTA, YUUICHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 014966/0854 →
Assignment of Assignor's Interest
Mar 29, 2004
From: AOYAMA, TOMONORI
To: SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
Reel/Frame 015159/0799 →
Assignment of Assignor's Interest
Jun 14, 2004
From: MORIKADO, MUTSUO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 015463/0134 →
Assignment of Assignor's Interest
Jul 23, 2004
From: INUMIYA, SEIJI; EGUCHI, KAZUHIRO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 015602/0551 →
Assignment of Assignor's Interest
Mar 8, 2005
From: SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 015745/0989 →
Assignment of Assignor's Interest
Apr 18, 2005
From: INABA, SATOSHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 016467/0180 →
Assignment of Assignor's Interest
Nov 20, 2006
From: HEAD USA, INC.
To: HEAD TECHNOLOGY GMBH, LTD
Reel/Frame 018539/0534 →