Method for fabricating semiconductor device
View Patent ↗An aspect of the present disclosure, there is provided a method for fabricating a semiconductor device, including, forming a gate insulating film on a semiconductor substrate, forming a metal film on the gate insulating film, depositing a metal-silicon compound film on the metal film without exposing the semiconductor substrate into atmosphere after forming the metal film, forming a silicon film on the metal-silicon compound film, and etching the metal film, the metal-silicon compound film, and the silicon film.
1. A method for fabricating a semiconductor device, comprising:
forming a gate insulating film on a semiconductor substrate,
forming a metal film on the gate insulating film,
depositing a metal-silicon compound film on the metal film without exposing the semiconductor substrate into atmosphere after forming the metal film,
forming a silicon film on the metal-silicon compound film, and
etching the metal film, the metal-silicon compound film, and the silicon film.
2. The method of claim 1 , further comprising:
removing an oxide film formed on a surface of the metal-silicon compound film before the silicon film is formed.
3. The method of claim 1 , wherein
the metal film is at least one of a nitride of elements in the Groups IV, V and VI, a carbide of elements in the Groups IV, V and VI, a silicon nitride, of elements in the Groups IV, V and VI and, a silicon carbide, of elements in the Groups IV, V and VI.
4. The method of claim 1 , wherein
the metal-silicon compound film includes at least one of metals in the Groups IV, V or VI.
5. The method of claim 1 , wherein
each of the metal film and the metal-silicon compound film includes at least one of metals in the same Group of Groups IV, V and VI.
6. The method of claim 1 , wherein
the semiconductor substrate has a p-type MOS area and an n-type MOS area.
7. The method of claim 6 , further comprising:
forming a SiGe layer on the p-type MOS area of the semiconductor substrate before forming the gate insulating film on the semiconductor substrate.
8. The method of claim 1 , further comprising:
forming an interfacial layer on the semiconductor substrate before forming the gate insulating layer.
9. The method of claim 6 , further comprising:
forming an interfacial layer on the n-type MOS area of the semiconductor substrate and on the SiGe layer on the p-type MOS area before forming the gate insulating layer.
10. The method of claim 6 , further comprising:
forming a threshold control layer on the gate insulating film in the n-type MOS area before the metal film is formed onto the gate insulating film.
11. The method of claim 10 , wherein
the threshold control layer on the n-type MOS area includes magnesium or lanthanum.
12. The method of claim 6 , further comprising:
forming a threshold control layer on the gate insulating film in the p-type MOS area before the metal film is formed on the gate insulating film.
13. The method of claim 12 , wherein
the threshold control layer in the p-type MOS area includes alumina.
14. The method of claim 1 , wherein
the gate insulating film is at least one of oxides of Hf, Zr, Ti, Ta, Al, Sr, Y and La, silicon oxides of Hf, Zr, Ti, Ta, Al, Sr and Y, and laminated films including the oxides and/or the silicon oxides.