Semiconductor device and method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device comprising:

forming a plurality of Fins including a semiconductor material on an insulation layer;

forming gate insulation films on sidewalls of the Fins;

forming a gate electrode which extends in a direction of arrangement of the Fins and which is electrically insulated from the Fins, the gate electrode is common in the Fins on the gate insulation film;

implanting an impurity into portions of the Fins by using the gate electrode as a mask to form a source-drain diffusion layer, the portions of the Fins extending on both sides of the gate electrodes; and

depositing a conductive material on both sides of the Fins to connect the Fins to each other.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein

the conductive material connecting between the Fins is formed by epitaxial-growing a semiconductor material on upper surfaces or on side surfaces of the Fins.

3. The method of manufacturing a semiconductor device according to claim 1 , wherein

the conductive material connecting between the Fins is formed by depositing a metal material on top surfaces or on side surfaces of the Fins.

4. The method of manufacturing a semiconductor device according to claim 1 , wherein

the conductive material connecting between the Fins is formed by providing a silicide layer on top surfaces or on side surfaces of the Fins.

5. The method of manufacturing a semiconductor device according to claim 1 further comprising in the formation of the Fins:

preparing a semiconductor substrate including a semiconductor layer on an insulator;

depositing a mask material of an insulation material on the semiconductor layer;

forming a plurality of dummy patterns arranged on the mask material at a minimum pitch which can be achieved by lithography;

depositing a sidewall material on the dummy patterns, the sidewall material being different from the material of the dummy patterns;

etching the sidewall material anisotropically to form sidewall patterns on both sides of each dummy pattern;

etching the dummy patterns selectively, while leaving the sidewall patterns;

etching the mask material by using the sidewall patterns as a mask; and

etching the semiconductor layer by using the mask material as a mask to form the plurality of Fins.

6. The method of manufacturing a semiconductor device according to claim 1 further comprising, in the formation of the Fins:

preparing a semiconductor substrate including a semiconductor layer on an insulator;

depositing a mask material of an insulation material on the semiconductor layer;

forming a plurality of dummy patterns arranged on the mask material at a minimum pitch which can be achieved by lithography;

depositing a first sidewall material on the dummy patterns, the sidewall material being different from the material of the dummy patterns;

etching the first sidewall material anisotropically to form first sidewall patterns on both sides of each dummy patterns;

etching the dummy patterns selectively, while leaving the first sidewall patterns;

depositing a second sidewall material on the first sidewall patterns, the second sidewall material being different from the first sidewall material;

etching the second sidewall material anisotropically to form second sidewall patterns on both sides of each first sidewall patterns;

etching the first sidewall patterns selectively, while leaving the second sidewall patterns;

etching the mask material by using the second sidewall patterns as a mask; and

etching the semiconductor layer by using the mask material as a mask to form the plurality of Fins.

7. The method of manufacturing a semiconductor device according to claim 1 further comprising in the formation of the Fins:

preparing a semiconductor substrate including a semiconductor layer on an insulator;

depositing a mask material of an insulation material on the semiconductor layer;

forming a plurality of dummy patterns arranged on the mask material at a minimum pitch which can be achieved by lithography;

depositing a first sidewall material on the dummy patterns, the sidewall material being different from the material of the dummy patterns;

etching the first sidewall material anisotropically to form first sidewall patterns on both sides of each dummy patterns;

etching the dummy patterns selectively, while leaving the first sidewall patterns;

depositing a second sidewall material on the first sidewall patterns, the second sidewall material being different from the first sidewall material;

etching the second sidewall material anisotropically to form second sidewall patterns on both sides of each first sidewall patterns;

etching the first sidewall patterns selectively, while leaving the second sidewall patterns;

depositing a third sidewall material on the second sidewall patterns, the third sidewall material being different from the second sidewall material;

etching the third sidewall material anisotropically to form third sidewall patterns on both sides of each of the second sidewall patterns;

etching the second sidewall patterns selectively, while leaving the third sidewall patterns;

etching the mask material by using the third sidewall patterns as a mask; and

etching the semiconductor layer by using the mask material as a mask to form the plurality of Fins.