Semiconductor device with MISFET

1. A semiconductor device, comprising:

a substrate;

a semiconductor region provided in the substrate;

a group of transistors including a plurality of metal insulator semiconductor (MIS) transistors and provided in the semiconductor region, the MIS transistors including a plurality of gate electrodes which extend in a first direction and are provided on the semiconductor region via gate insulation films; an insulation film provided on the group of transistors; and

a first contact layer and a second contact layer extending in the first direction and provided on the semiconductor region at opposite sides of the group of transistors, each of the first contact layer and the second contact layer having a rectangular planar configuration, wherein the first and second contact layers have a length substantially equal to a channel width of the MIS transistors.

2. The semiconductor device according to claim 1 , wherein the first and second contact layers partition the insulation film.

3. The semiconductor device according to claim 1 , wherein:

each of the MIS transistors includes two source/drain regions provided in the semiconductor region;

the first contact layer is provided on a source/drain region of one of the MIS transistors which is located at one end of the group of transistors; and

the second contact layer is provided on a source/drain region of one of the MIS transistors which is located at another end of the group of transistors.

4. The semiconductor device according to claim 3 , wherein:

the gate electrodes extend to opposite ends of the semiconductor region in the first direction;

the source/drain regions extend to the opposite ends of the semiconductor region in the first direction; and

the first and second contact layers extend to opposite ends of the source/drain regions in the first direction.

5. The semiconductor device according to claim 3 , wherein each pair of adjacent ones of the MIS transistors use in common a corresponding one of the source/drain regions.

6. The semiconductor device according to claim 1 , wherein the gate electrodes are arranged with a minimum distance which is determined when the gate electrodes are manufactured to a minimum size by a manufacturing process.

7. The semiconductor device according to claim 1 , further comprising a third contact layer provided between the gate electrodes on the semiconductor region.

8. The semiconductor device according to claim 7 , wherein the third contact layer partitions the insulation film.

9. The semiconductor device according to claim 7 , wherein the third contact layer has a length substantially equal to a channel width of the MIS transistors.

10. The semiconductor device according to claim 7 , wherein the third contact layer is provided between those ones of the gate electrodes, which are arranged by a distance larger than a minimum distance determined when the gate electrodes are manufactured to a minimum size by a manufacturing process.

11. The semiconductor device according to claim 1 , wherein:

the semiconductor region is of a p-type;

the MIS transistors are of an n-type; and

the insulation film causes channel regions of the MIS transistors to produce tensile stress.

12. The semiconductor device according to claim 1 , wherein:

the semiconductor region is of an n-type;

the MIS transistors are of a p-type; and

the insulation film causes channel regions of the MIS transistors to produce compressive stress.