Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device has a semiconductor substrate, a semiconductor fin which is formed on the semiconductor substrate, which has a long side direction and a short side direction, and which has a carbon-containing silicon film including an impurity and a silicon film formed on the carbon-containing silicon film, a gate electrode which is formed to face both side surfaces of the semiconductor fin in the short side direction, source and drain regions which are respectively formed in the semiconductor fin located in the direction of both sides in the long side direction of the semiconductor fin so as to sandwich the gate electrode, and an element isolation insulating film which is formed on the side surface of the semiconductor fin and between the gate electrode and the semiconductor substrate.
1. A semiconductor device manufacturing method comprising:
forming a fin having a long side direction and a short side direction by processing a first silicon film and a carbon-containing silicon film of a laminated body which has the first silicon film on the carbon-containing silicon film;
forming an impurity contained in the carbon-containing silicon film;
forming a gate electrode on both side surfaces of the fin in the short side direction via a gate insulating film; and
forming source and drain regions in the fin located in the direction of both sides in the long side direction so as to sandwich the gate electrode;
wherein the first silicon film is not formed on side surfaces of the carbon-containing silicon film.
2. The semiconductor device manufacturing method according to claim 1 , further comprising: forming the gate insulating film on the fin; and forming the gate electrode on the fin via the gate insulating film.
3. The semiconductor device manufacturing method according to claim 1 , further comprising:
removing, after forming the gate electrode, the first silicon film located in the direction of both sides of the gate electrode so as to sandwich the gate electrode;
forming a silicon germanium film in the region in which the first silicon film is removed; and
forming the source and drain regions in the silicon germanium film.
4. The semiconductor device manufacturing method according to claim 1 , further comprising epitaxially growing silicon on both side surfaces of the first silicon film located in the direction of both sides of the gate electrode so as to sandwich the gate electrode.
5. The semiconductor device manufacturing method according to claim 1 , further comprising epitaxially growing silicon on the upper surface and both side surfaces of the first silicon film located in the direction of both sides of the gate electrode so as to sandwich the gate electrode.
6. The semiconductor device manufacturing method according to claim 1 , wherein the forming the impurity contained in the carbon-containing silicon film comprises:
providing a mask on both sides of the carbon-containing silicon film; and
using diffusion or scattering of impurity contained in the mask.
7. The semiconductor device manufacturing method according to claim 1 , wherein a second silicon film is provided under the carbon-containing silicon film, and
wherein the forming the impurity contained in the carbon-containing silicon film, comprises:
forming, after making the impurity contained in the second silicon film, the carbon-containing silicon film; and
moving the impurity contained in the second silicon film to the carbon-containing silicon film.
8. The semiconductor device manufacturing method according to claim 1 , further comprising making the impurity contained in the carbon-containing silicon film so that in the carbon-containing silicon film, the impurity concentration in the boundary surface between the carbon-containing silicon film and the first silicon film is smaller than the impurity concentration in regions in the carbon-containing silicon film other than the boundary surface.
9. The semiconductor device manufacturing method according to claim 1 , wherein the gate insulating film is not formed on side surfaces of the carbon-containing silicon film.