Method of manufacturing semiconductor device and semiconductor device
View Patent ↗A semiconductor device according to the embodiments comprises a gate insulator formed on a substrate, the gate insulator including a high-dielectric film in whole or part, a reaction film including a first metal on the gate insulator; a metal film including a second metal on the reaction film; and a film including Si formed on the metal film.
1. A semiconductor device comprising:
a gate insulator formed on a substrate, the gate insulator including a high-dielectric film in whole or part;
a reaction film including a first metal on the gate insulator;
a metal film including a second metal on the reaction film, the second metal being made with a different composition from that of the first metal, and a thermal stability of the second metal being greater than that of the first metal; and
a film including Si formed on the metal film.
2. The semiconductor device according to claim 1 , wherein
the first metal includes at least one of V, Nb, Ta, Ti, Zr and Hf, or at least one compound of one of V, Nb, Ta, Ti, Zr and Hf, and
the high-dielectric film includes at least one oxide of one of Hf, Zr, Ti, Ta, Al, Sr, Y and La, at least one oxide of silicon and one of Zr, Ti, Ta, Al, Sr, Y and La, or silicon oxide.
3. The semiconductor device according to claim 1 , wherein
the high-dielectric film includes a hafnium system insulator.
4. The semiconductor device according to claim 1 , wherein
the gate insulator in at least a part thereof includes a threshold adjusting film for controlling an operational threshold of the semiconductor device.
5. A semiconductor device comprising:
a gate insulator formed on a substrate, the gate insulator including a high-dielectric film in whole or part;
a reaction film formed as a result of thermal reaction between at least a part of the high-dielectric film and a first metal;
a metal film including a second metal on the reaction film, the second metal being made with a different composition from that of the first metal, and a thermal stability of the second metal being greater than that of the first metal; and
a film including Si formed on the metal film.
6. The semiconductor device according to claim 5 , wherein
the first metal includes at least one of V, Nb, Ta, Ti, Zr and Hf, or at least one compound of one of V, Nb, Ta, Ti, Zr and Hf, and
the high-dielectric film includes at least one oxide of one of Hf, Zr, Ti, Ta, Al, Sr, Y and La, at least one oxide of silicon and one of Zr, Ti, Ta, Al, Sr, Y and La, or silicon oxide.
7. The semiconductor device according to claim 5 , wherein
a damage in the high-dielectric film which has occurred at a time of forming the first metal film is compensated by forming the reaction film.
8. The semiconductor device according to claim 7 , wherein
the first metal includes at least one of V, Nb, Ta, Ti, Zr and Hf, or at least one compound of one of V, Nb, Ta, Ti, Zr and Hf, and
the high-dielectric film includes at least one oxide of one of Hf, Zr, Ti, Ta, Al, Sr, Y and La, at least one oxide of silicon and one of Zr, Ti, Ta, Al, Sr, Y and La, or silicon oxide.
9. The semiconductor device according to claim 5 , wherein
the gate insulator in at least a part thereof includes a threshold adjusting film for controlling an operational threshold of the semiconductor device.