Semiconductor device with fin and silicide structure

1. A semiconductor device, comprising:

a semiconductor substrate;

a fin formed on the semiconductor substrate;

a gate electrode formed so as to sandwich both side faces of the fin between its opposite portions via a gate insulating film;

an extension layer formed on a region of a side face of the fin, the region being on the both sides of the gate electrode, the extension layer having a plane faced to a surface of the semiconductor substrate at an acute angle;

a silicide layer formed on a surface of the plane faced to the surface of the semiconductor substrate at an acute angle; and

a gate silicide layer on upper and lower surfaces of the gate electrode.

2. A semiconductor device according to claim 1 , wherein a strain generating film to generate a strain in a region of the fin is formed under the gate electrode, the region being sandwiched by opposite portions of the gate electrode.

3. A semiconductor device according to claim 1 , wherein the extension layer comprises a Si-based crystal.

4. A semiconductor device according to claim 1 , wherein the plane faced to the surface of the semiconductor substrate at an acute angle is a facet of which plane direction is {111}.

5. A semiconductor device according to claim 1 , wherein the extension layer has a plane facing to a height direction of the fin and forming an obtuse angle with a surface of the semiconductor substrate.