Semiconductor device having fins FET and manufacturing method thereof

1. A manufacturing method of a semiconductor device comprising:

forming a line-form insulating film on a main surface of a semiconductor substrate;

etching the semiconductor substrate with the line-form insulating film used as a mask to form two adjacent first trenches on both sides of the line-form insulating film;

forming side wall insulating films on respective side walls of the adjacent first trenches;

etching the semiconductor substrate with the line-form insulating film and side wall insulating films used as a mask to form second trenches in bottom portions of the adjacent first trenches;

oxidizing the semiconductor substrate with the line-form insulating film and side wall insulating films used as an anti-oxidation mask to cause oxide regions formed on adjacent side walls of the second trenches lying on both sides of the semiconductor substrate to make contact with each other;

removing the line-form insulating film and side wall insulating films;

forming a gate insulating film on a surface of a semiconductor region of the semiconductor substrate which is exposed by removing the line-form insulating film and the side wall insulating films;

forming a gate electrode on the gate insulating film; and

forming a fin field effect transistor having the semiconductor region as a line-form fin.

2. The manufacturing method of the semiconductor device according to claim 1 , further comprising removing a portion of the oxide regions lying under the semiconductor region to be used as the fin which is formed in contact with the semiconductor region after the removing and before the forming the gate insulating film.

3. The manufacturing method of the semiconductor device according to claim 1 , further comprising rounding a cross sectional shape of the semiconductor region to be used as the line-form fin by performing an annealing process in an atmosphere containing hydrogen after the removing and before the forming the gate insulating film.

4. A manufacturing method of a semiconductor device comprising:

simultaneously forming a line-form first insulating film and a second insulating film having larger line width than the first insulating film on a main surface of a semiconductor substrate;

etching the semiconductor substrate with the line-form first and second insulating films used as a mask to form a plurality of first trenches on both sides of the first and second insulating films;

forming side wall insulating films on respective side walls of the plurality of first trenches;

etching the semiconductor substrate with the first and second insulating films and side wall insulating films used as a mask to form second trenches in bottom portions of the plurality of first trenches;

oxidizing the semiconductor substrate with the first and second insulating films and side wall insulating films used as an anti-oxidation mask to cause oxide regions formed on adjacent side walls of the second trenches which lie on both sides of the first insulating film and sandwich the semiconductor substrate to make contact with each other and prevent oxide regions formed on adjacent side walls of the second trenches which lie on both sides of the second insulating film and sandwich the semiconductor substrate from making contact with each other;

removing the first and second insulating films and side wall insulating films;

forming a gate insulating film on a surface of a semiconductor region of the semiconductor substrate which is exposed by removing the first insulating film and forming a gate electrode on the gate insulating film to form a fin field effect transistor having the semiconductor region as a line-form fin; and

forming one of a planar field effect transistor and planar region on a different semiconductor region of the semiconductor substrate which is exposed by removing the second insulating film.

5. The manufacturing method of the semiconductor device according to claim 4 , further comprising removing a portion of the oxide region lying under the semiconductor region to be used as the fin which is formed in contact with the semiconductor region after the removing and before the forming the gate insulating film.

6. The manufacturing method of the semiconductor device according to claim 4 , further comprising rounding a cross sectional shape of the semiconductor region to be used as the fin by performing an annealing process in an atmosphere containing hydrogen after the removing and before the forming the gate insulating film.

7. The manufacturing method of the semiconductor device according to claim 4 , further comprising respectively forming dummy gate insulating films on surfaces of the semiconductor region and planar region, forming a dummy gate electrode material on the dummy gate insulating films, and patterning the dummy gate electrode material to form dummy gate electrode patterns.

8. The manufacturing method of the semiconductor device according to claim 7 , further comprising forming a TEOS film on the dummy gate electrode patterns, making an upper surface of the TEOS film flat to expose top portions of the dummy gate electrode patterns, and etching and removing the dummy gate electrode patterns and proceeds the etching process to bottom portions of nano wires to form hollow structures.

9. The manufacturing method of the semiconductor device according to claim 8 , wherein the forming the hollow structures includes covering the planar region with resist, and forming an opening in the fin region by etching and removing the dummy gate electrode patterns.

10. The manufacturing method of the semiconductor device according to claim 9 , further comprising removing the resist.

11. The manufacturing method of the semiconductor device according to claim 10 , further comprising forming a gate insulating film on an entire portion of surfaces of the nano wires, forming a gate electrode material on the gate insulating film, and making flat the gate electrode material layer and removing part of the gate electrode material.