Method of manufacturing semiconductor device
View Patent ↗A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
1. A method of manufacturing a semiconductor device comprising:
preparing a semiconductor substrate which has a main surface including a first region in which a semiconductor oxide film, a semiconductor nitride film, or a semiconductor oxynitride film are provided, and a second region in which the semiconductor substrate is exposed; and
depositing HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade to form HfSiO films having different hafnium concentrations in the first region and in the second region.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein
hafnium concentration of the HfSiO film formed in the second region is lower than hafnium concentration of the HfSiO film formed in the first region.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein
a physical film thickness of the HfSiO film formed in the second region is smaller than a physical film thickness of the HfSiO film formed in the first region.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein
the semiconductor oxide film, the semiconductor nitride film, or the semiconductor oxynitride film, and the HfSiO film formed in the first region are provided as a gate dielectric film of an MISFET formed in the first region, and
the HfSiO film formed in the second region is provided as a gate dielectric film of an MISFET formed in the second region.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein
the HfSiO film is formed according to a chemical vapor deposition method which uses at least an organic silicon compound having amino ligand, or an inorganic silicon compound of silane system, and an organic hafnium compound having amino ligand.