Semiconductor device and manufacturing method of semiconductor device
View Patent ↗According to one embodiment, a manufacturing method of a semiconductor device includes a step of forming a dummy-fin semiconductor on a semiconductor substrate; a step of forming an insulating layer, into which a lower part of the dummy-fin semiconductor is buried, on the semiconductor substrate; a step of forming a fin semiconductor, which is bonded to a side face at an upper part of the dummy-fin semiconductor, on the insulating layer; and a step of removing the dummy-fin semiconductor on the insulating layer with the fin semiconductor being left on the insulating layer.
1. A manufacturing method of a semiconductor device comprising:
forming a dummy-fin semiconductor on a semiconductor substrate;
forming an insulating layer, into which a lower part of the dummy-fin semiconductor is buried, on the semiconductor substrate;
forming a fin semiconductor, which is bonded to a side face at an upper part of the dummy-fin semiconductor, on the insulating layer; and
removing the dummy-fin semiconductor on the insulating layer with the fin semiconductor being left on the insulating layer.
2. The manufacturing method of a semiconductor device according to claim 1 , wherein
the dummy-fin semiconductor is made of a material having a higher etching rate than the fin semiconductor.
3. The manufacturing method of a semiconductor device according to claim 1 , wherein
first and second fin semiconductors, each having a different etching rate, are alternately and repeatedly formed on the insulating layer in the lateral direction of the dummy-fin semiconductor.
4. The manufacturing method of a semiconductor device according to claim 3 , wherein
the dummy-fin semiconductor and the second fin semiconductor on the insulating layer are removed with the first fin semiconductor being left on the insulating layer, when the second fin semiconductor has a higher etching rate than the first fin semiconductor.
5. The manufacturing method of a semiconductor device according to claim 1 , wherein
the forming the dummy-fin semiconductor on the semiconductor substrate includes:
forming a semiconductor layer on the semiconductor substrate;
forming a hard mask layer on the semiconductor layer; and
etching the semiconductor layer with the hard mask layer being used as a mask.
6. The manufacturing method of a semiconductor device according to claim 5 , wherein
the forming the insulating layer, into which the lower part of the dummy-fin semiconductor is buried, on the semiconductor substrate includes:
burying the whole dummy-fin semiconductor into the insulating layer; and
etching back the insulating layer.
7. The manufacturing method of a semiconductor device according to claim 1 , further comprising:
forming a sidewall on the side face of the fin semiconductor, before the dummy-fin semiconductor is removed.
8. The manufacturing method of a semiconductor device according to claim 7 , further comprising:
burying a protection film on a portion from which the dummy-fin semiconductor is removed, after the dummy-fin semiconductor is removed.
9. The manufacturing method of a semiconductor device according to claim 8 , further comprising:
forming a cap layer on the fin semiconductor, after the protection film is buried in the portion from which the dummy-fin semiconductor is removed.
10. The manufacturing method of a semiconductor device according to claim 9 , further comprising:
removing the sidewall and the protection film, after the cap layer is formed on the fin semiconductor; and
forming a gate insulating film on the side face of the fin semiconductor, after the sidewall and the protection film are removed.
11. The manufacturing method of a semiconductor device according to claim 10 , further comprising:
forming a gate electrode on the side face of the fin semiconductor via the gate insulating film.