Method for manufacturing semiconductor device

1. A method for manufacturing a semiconductor device, comprising:

forming a depression in an upper portion of a semiconductor substrate;

placing a sacrificial material in the depression;

forming a plurality of fins extending in one direction and arranged periodically by selectively removing the semiconductor substrate and the sacrificial material;

forming a device isolation insulating film in a lower portion of space between the fins;

removing the sacrificial material;

forming a gate insulating film on an exposed surface of the fin; and

forming a gate electrode extending in a direction crossing the one direction so as to straddle the fin on the device isolation insulating film.

2. The method according to claim 1 , further comprising:

forming a first film on the semiconductor substrate before the forming a depression;

forming a second film made of a material different from material of the first film and material of the sacrificial material on the first film and the sacrificial material;

forming a third film made of a material different from the material of the second film on the second film;

forming a sidewall made of a material different from any of the material of the first film, the material of the second film, and the material of the third film on a side surface of a stacked body made of the fin, the first film, the second film, and the third film;

removing the third film; and

removing the sidewall,

wherein the forming the plurality of fins includes:

forming a hard mask on the third film; and

patterning the third film, the second film, the first film, the semiconductor substrate, and the sacrificial material by etching using the hard mask as a mask.

3. The method according to claim 2 , further comprising:

forming a fourth film on the side surface of the fin; and

removing the fourth film and the second film after the removing the sidewall,

wherein the semiconductor substrate and the sidewall are formed from silicon,

the sacrificial material is formed from silicon germanium,

the device isolation insulating film, the second film, and the fourth film are formed from silicon oxide, and

the first film and the third film are formed from silicon nitride.

4. The method according to claim 1 , wherein the forming the device isolation insulating film includes:

depositing an insulating material;

heating the insulating material; and

setting back an upper surface of a film made of the insulating material by etching.

5. The method according to claim 1 , wherein the semiconductor device is a magnetoresistive random access memory.

6. A method for manufacturing a semiconductor device, comprising:

forming a depression in an upper portion of a semiconductor substrate;

forming a barrier film on an inner surface of the depression;

placing a sacrificial material in the depression;

forming a plurality of fins extending in one direction and arranged periodically by selectively removing the semiconductor substrate, the barrier film, and the sacrificial material;

forming a device isolation insulating film in a lower portion of space between the fins;

removing the sacrificial material by etching using the barrier film as a stopper;

forming a gate insulating film on an exposed surface of the fin; and

forming a gate electrode extending in a direction crossing the one direction so as to straddle the fin on the device isolation insulating film.

7. The method according to claim 6 , further comprising:

forming a first film on the semiconductor substrate before the forming the depression;

forming a second film made of a material different from material of the first film and material of the sacrificial material on the first film and the sacrificial material;

forming a third film made of a material different from the material of the second film on the second film;

forming a sidewall made of a material different from any of the material of the first film, the material of the second film, and the material of the third film on a side surface of a stacked body made of the fin, the first film, the second film, and the third film;

removing the third film; and

removing the sidewall,

wherein the forming the plurality of fins includes:

forming a hard mask on the third film; and

patterning the third film, the second film, the first film, the semiconductor substrate, and the sacrificial material by etching using the hard mask as a mask.

8. The method according to claim 7 , further comprising:

forming a fourth film on the side surface of the fin; and

removing the fourth film and the second film after the removing the sidewall,

wherein the sidewall is formed on the fourth film,

the semiconductor substrate, the sacrificial material, and the sidewall are formed from silicon,

the device isolation insulating film, the second film, and the fourth film are formed from silicon oxide, and

the barrier film, the first film, and the third film are formed from silicon nitride.

9. The method according to claim 6 , wherein the forming the device isolation insulating film includes:

depositing an insulating material;

heating the insulating material; and

setting back an upper surface of a film made of the insulating material by etching.

10. The method according to claim 6 , wherein the semiconductor device is a magnetoresistive random access memory.

11. A method for manufacturing a semiconductor device, comprising:

forming a depression in an upper portion of a semiconductor substrate;

placing a sacrificial material in the depression;

forming a plurality of fins extending in one direction and arranged periodically by selectively removing the semiconductor substrate and the sacrificial material;

forming a device isolation insulating film in a lower portion of space between the fins;

forming a gate insulating film on an exposed surface of the fin;

forming a first conductive film so as to cover the fin on the device isolation insulating film;

exposing the sacrificial material at an upper surface of the first conductive film;

removing the sacrificial material;

forming a second conductive film on the first conductive film; and

forming a gate electrode extending in a direction crossing the one direction by selectively removing the second conductive film and the first conductive film.

12. The method according to claim 11 , further comprising:

forming a first film on the semiconductor substrate before the forming the depression;

forming a second film made of a material different from material of the first film and material of the sacrificial material on the first film and the sacrificial material;

forming a third film made of a material different from the material of the second film on the second film; and

burying an insulating member in a trench formed by removal of the third film, the second film, and the sacrificial material in the first conductive film,

wherein the exposing the sacrificial material includes:

exposing the third film at the upper surface of the first conductive film by performing planarization treatment on the first conductive film using the third film as a stopper;

removing the third film; and

removing the second film.

13. The method according to claim 12 , wherein

the semiconductor substrate and the first conductive film are formed from silicon,

the sacrificial material is formed from silicon germanium,

the device isolation insulating film, the gate insulating film, and the second film are formed from silicon oxide, and

the first film and the third film are formed from silicon nitride.

14. The method according to claim 11 , wherein the forming the device isolation insulating film includes:

depositing an insulating material;

heating the insulating material; and

setting back an upper surface of a film made of the insulating material by etching.

15. The method according to claim 11 , wherein the semiconductor device is a magnetoresistive random access memory.