Semiconductor device and method for manufacturing same
View Patent ↗A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr.
1. A semiconductor device, comprising:
a semiconductor layer;
a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and
a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr,
wherein a concentration of the one of Hf and Zr included in the gate insulation film and a concentration of the one of Hf and Zr included in the gate electrode are substantially same at an interface between the gate insulation film and the gate electrode.
2. The device according to claim 1 , wherein the gate electrode further includes at least one of Si and Ge.
3. The device according to claim 1 , wherein the gate electrode includes:
a first gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr; and
a second gate electrode provided on the first gate electrode and including at least one of Si and Ge.
4. The device according to claim 1 , wherein the gate insulation film is an HfSiON film, and an HfSiCN film is provided on the HfSiON film as the gate electrode.
5. The device according to claim 4 , wherein an Hf concentration in the HfSiON film on the semiconductor layer side is lower than an Hf concentration on the HfSiCN film side.
6. The device according to claim 4 , wherein an N concentration in the HfSiON film on the semiconductor layer side is lower than an N concentration on the HfSiCN film side.
7. The device according to claim 3 , wherein
the gate insulation film is a HfSiON film,
a HfSiCN film is provided on the HfSiON film as the first gate electrode, and
an Hf concentration decreases along the HfSiCN film toward an interface with the second gate electrode.
8. The device according to claim 3 , wherein
the gate insulation film is an HfSiON film,
a HfSiCN film is provided on the HfSiON film as the first gate electrode, and
an Si concentration increases along the HfSiCN film toward an interface with the second gate electrode.
9. The device according to claim 1 , wherein a protective film is provided on the gate electrode to prevent oxidation of the gate electrode.
10. The device according to claim 9 , wherein the protective film includes any of TiN, MoN, WN, TaC, TaSiN, TaN, and AlN.
11. The device according to claim 1 , wherein a silicide film is formed on a top layer portion of the gate electrode.
12. A semiconductor device, comprising:
a semiconductor layer;
a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and
a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr, wherein
the gate insulation film further includes Si,
the gate electrode further includes Si, and
a concentration of Si included in the gate insulation film and a concentration of Si included in the gate electrode are substantially same at an interface between the gate insulation film and the gate electrode.
13. The device according to claim 12 , wherein the gate electrode includes:
a first gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr; and
a second gate electrode provided on the first gate electrode and including Si.
14. The device according to claim 12 , wherein the gate insulation film is a HfSiON film, and a HfSiCN film is provided on the HfSiON film as the gate electrode.
15. The device according to claim 14 , wherein a Hf concentration in the HfSiON film on the semiconductor layer side is lower than a Hf concentration on the HfSiCN film side.
16. The device according to claim 14 , wherein a N concentration in the HfSiON film on the semiconductor layer side is lower than a N concentration on the HfSiCN film side.
17. The device according to claim 13 , wherein
the gate insulation film is an HfSiON film,
a HfSiCN film is provided on the HfSiON film as the first gate electrode, and
a Hf concentration decreases along the HfSiCN film toward an interface with the second gate electrode.
18. The device according to claim 13 , wherein
the gate insulation film is a HfSiON film,
a HfSiCN film is provided on the HfSiON film as the first gate electrode, and
a Si concentration increases along the HfSiCN film toward an interface with the second gate electrode.
19. The device according to claim 12 , wherein a protective film is provided on the gate electrode to prevent oxidation of the gate electrode.
20. A method for manufacturing a semiconductor device, comprising:
forming a gate insulation film including at least one of Hf and Zr on a semiconductor layer; and
forming a gate electrode including a carbonitride which includes at least one of Hf and Zr on the gate insulation film,
wherein a concentration of the one of Hf and Zr included in the gate insulation film and a concentration of the one of Hf and Zr included in the gate electrode are substantially same at an interface between the gate insulation film and the gate electrode.
21. The method according to claim 20 , wherein a precursor including Hf(NR 1 R 2 ) 4 is used as a precursor of Hf and a precursor including SiR 3 R 4 R 5 R 6 is used as a precursor of Si to form the gate electrode as a film including Hf, Si, C, and N, where R 1 and R 2 are selected from H, CH 3 , C 2 H 5 , and C 3 H 7 , and R 3 , R 4 , R 5 , and R 6 are selected from H, NH 2 , N(CH 3 ) 2 , N(C 2 H 5 ) 2 , and N(C 3 H 7 ) 2 .
22. The method according to claim 20 , wherein both the gate electrode including Hf, Si, C, and N and the gate insulation film including Hf, Si, 0 , and N are formed as films using the same Hf precursor and the same Si precursor.
23. The method according to claim 20 , wherein the forming the gate insulation film includes:
forming an HfSiO film by CVD (chemical vapor deposition); and
forming an HfSiON film by performing plasma nitriding on the HfSiO film.
24. The method according to claim 20 , wherein the forming the gate electrode includes forming an HfSiCN film by CVD (chemical vapor deposition).
25. The method according to claim 24 , wherein hydrogen gas is added to a source gas when forming the HfSiCN film by the CVD.
26. The method according to claim 24 , wherein the forming the gate electrode further includes performing plasma nitriding on the HfSiCN film.