Semiconductor device and method of manufacturing semiconductor device
View Patent ↗Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
1. A semiconductor device comprising:
a substrate;
an insulating film formed above the substrate and comprising HfSiON, Hf—N bonds being distributed in the HfSiON and a content of the Hf—N bonds being 1 atomic % or more; and
an electrode formed above the insulating film.
2. The semiconductor device according to claim 1 , wherein metallic bonds formed by Hf—Hf bonds and Hf—Si bonds are not substantially present.
3. The semiconductor device according to claim 1 , wherein a content of metallic bonds formed by the Hf—Hf bonds and Hf—Si bonds are less than a detection limit.
4. The semiconductor device according to claim 1 , wherein a content of the N in the insulating film is 28.5 atomic % to 52 atomic %.
5. The semiconductor device according to claim 1 , wherein a content of the Hf in the insulating film is 47 atomic % or more based on the total amount of the Hf and Si.
6. The semiconductor device according to claim 1 , wherein a dielectric constant of the insulating film is 15 or more.
7. The semiconductor device according to claim 1 , wherein the insulating film is in an amorphous state.
8. The semiconductor device according to claim 1 , wherein the substrate has impurity diffusion regions formed in separate regions of the substrate, the insulating film is a gate insulating film formed between the impurity diffusion regions, and the electrode is a gate electrode.
9. A semiconductor device comprising:
a substrate;
an insulating film formed above the substrate and comprising ZrSiON, Zr—N bonds being distributed in the ZrSiON and a content of the Zr—N bonds being 1 atomic % or more; and
an electrode formed above the insulating film.
10. The semiconductor device according to claim 9 , wherein metallic bonds formed by Zr—Zr bonds and Zr—Si bonds are not substantially present.
11. The semiconductor device according to claim 9 , wherein a content of metallic bonds formed by the Zr—Zr bonds and Zr—Si bonds are less than a detection limit.
12. The semiconductor device according to claim 9 , wherein a content of the N in the insulating film is 28.5 atomic % to 52 atomic %.
13. The semiconductor device according to claim 9 , wherein a content of the Zr in the insulating film is 47 atomic % or more based on the total amount of the Zr and Si.
14. The semiconductor device according to claim 9 , wherein a dielectric constant of the insulating film is 15 or more.
15. The semiconductor device according to claim 9 , wherein the insulating film is in an amorphous state.
16. The semiconductor device according to claim 9 , wherein the substrate has impurity diffusion regions formed in separate regions of the substrate, the insulating film is a gate insulating film formed between the impurity diffusion regions, and the electrode is a gate electrode.