Semiconductor device and method of manufacturing semiconductor device
View Patent ↗A method of manufacturing a semiconductor device includes forming a plurality of Fins including a semiconductor material on an insulation layer; forming gate insulation films on sidewalls of the Fins; forming a gate electrode which extends in a direction of arrangement of the Fins and which is electrically insulated from the Fins, the gate electrode is common in the Fins on the gate insulation film; implanting an impurity into portions of the Fins by using the gate electrode as a mask to form a source-drain diffusion layer, the portions of the Fins extending on both sides of the gate electrodes; and depositing a conductive material on both sides of the Fins to connect the Fins to each other.
1. A semiconductor device comprising:
an insulation layer;
a plurality of Fins arranged on the insulating film at a pitch smaller than a minimum pitch which includes a line and space pattern;
gate insulation films formed on sidewalls of the Fins;
a gate electrode which extends in a direction of arrangement of the Fins and which is electrically insulated from the plurality of Fins, the gate electrode being common in the plurality of Fins;
source-drain layers formed in portions of the Fins, the portions of the Fins being arranged on both sides of the gate electrode; and
a metal or a metal silicide which is in contact with upper surfaces or side surfaces of the source-drain layers of the plurality of Fins to connect the Fins to each other.
2. The semiconductor device according to claim 1 , wherein
pitches between Fins being adjacent to each other is any one of ½, ¼, ⅛ . . . ½ n (n is a natural number) of a minimum pitch which includes a line and space pattern.
3. The semiconductor device according to claim 1 , wherein
a material of the gate electrode of an nMOS is a material having a work function closer to a conduction band than to the center level of the bandgap of silicon, and
a material of the gate electrode of a pMOS is a material having a work function closer to a valence band than to the center level of the bandgap of silicon.
4. The semiconductor device according to claim 1 , wherein
a material of the gate electrode of an nMOS is any one of YbSi 2-x , ErSi 2-x , TbSi 2-x , DySi 2-x RuTa, Ta, Hf—AIN, TaN, Ti, (Ar-ion-doped) Mo, and Er, and
a material of the gate electrode of a pMOS is any one of PtSi, Ru, Ta—AIN, Mo, NiGe, Pt, Ni, W, and TiN.
5. The semiconductor device according to claim 1 , wherein
a material of the source-drain electrodes of an nMOS is a material having a work function closer to a conduction band than to the center level of the bandgap of silicon, and
a material of the source-drain electrodes of a pMOS is a material having a work function closer to a valence band than to the center level of the bandgap of silicon.
6. The semiconductor device according to claim 1 , wherein
a material of the source-drain electrode of an nMOS is any one of YbSi 2-x , ErSi 2-x , TbSi 2-x , DySi 2-x , RuTa, Ta, Hf—AIN, TaN, Ti, (Ar-ion-doped) Mo, and Er, and
a material of the source-drain electrode of a pMOS is any one of PtSi, Ru, Ta—AIN, Mo, NiGe, Pt, Ni, W, and TiN.
7. The semiconductor device according to claim 2 , wherein
a material of the gate electrode of the nMOS is a material having a work function closer to a conduction band than to the center level of the bandgap of silicon, and
a material of the gate electrode of a pMOS is a material having a work function closer to a valence band than to the center level of the bandgap of silicon.
8. The semiconductor device according to claim 2 , wherein
a material of the gate electrode of an nMOS is any one of YbSi 2-x , ErSi 2-x , TbSi 2-x , DySi 2-x , RuTa, Ta, Hf—AIN, TaN, Ti, (Ar-ion-doped) Mo, and Er and
a material of the gate electrode of a pMOS is any one of PtSi, Ru, Ta—AIN, Mo, NiGe, Pt, Ni, W, and TiN.
9. The semiconductor device according to claim 2 , wherein
a material of the source-drain electrodes of an nMOS is a material having a work function closer to a conduction band than to the center level of the bandgap of silicon, and
a material of the source-drain electrodes of a pMOS is a material having a work function closer to a valence band than to the center level of the bandgap of silicon.
10. The semiconductor device according to claim 2 , wherein
a material of the source-drain electrode of an nMOS is any one of YbSi 2-x , ErSi 2-x , TbSi 2-x , DySi 2-x , RuTa, Ta, Hf—AIN, TaN, Ti, (Ar-ion-doped) Mo, and Er, and
a material of the source-drain electrode of a pMOS is any one of PtSi, Ru, Ta—AIN, Mo, NiGe, Pt, Ni, W, and TiN.