Semiconductor device and method for manufacturing the same
View Patent ↗It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si<31/12 above the first gate insulating film, and a second nickel silicide having a composition of Ni/Si≧31/12 on the second gate insulating film; and segregating aluminum at an interface between the first nickel silicide and the first gate insulating film by diffusing aluminum through the first nickel silicide.
1. A method for manufacturing a semiconductor device, comprising:
forming a p-type semiconductor region and an n-type semiconductor region in a substrate;
forming first and second gate insulating films on the p-type and n-type semiconductor regions, respectively;
forming first and second metal layers on the first and second gate insulating films respectively;
forming a third metal layer including aluminum on the first and second metal layers; and
diffusing the aluminum through the first metal layer and diffusing the aluminum in the second metal layer by performing heat treatment, to segregate the aluminum at an interface between the first metal layer and the first gate insulating film.
2. The method according to claim 1 , wherein the first metal layer has a composition in which aluminum can be more easily diffused as compared to a composition of the second metal layer.
3. The method according to claim 2 , wherein the second metal layer has a stacked structure comprising a first metal film formed on the second gate insulating layer and a second metal film formed on the first metal film, the first metal film having a composition in which aluminum can be more easily diffused as compared to a composition of the second metal film.
4. The method according to claim 3 , wherein a thickness of the second metal film is 10 nm or more.
5. The method according to claim 3 , wherein the second metal film is formed of Ni 3 Si.
6. The method according to claim 1 , wherein the aluminum profile of the second metal layer in a depth direction is steeper than that of the first metal layer in a depth direction after the heat treatment.
7. The method according to claim 1 , wherein the first metal layer is formed of the nickel silicide.
8. The method according to claim 1 , wherein a thickness of the third metal layer is 3 nm or more and 50 nm or less.
9. The method according to claim 1 , wherein an aluminum oxide is formed on a surface of the third metal layer.
10. The method according to claim 1 , wherein the heat treatment is performed at a temperature between 400° C. and 600° C.
11. The method according to claim 1 , wherein the first and second gate insulating films include at least one element selected from Hf, Zr, Ti and La.
12. The method according to claim 1 , wherein the first and second gate insulating films include HfSiON layer.
13. The method according to claim 1 , wherein the first and second gate insulating films include HfAlON layer.
14. The method according to claim 1 , wherein the first and second gate insulating films include HfON layer.
15. The method according to claim 1 , wherein the first and second gate insulating films include LaAlO layer.
16. The method according to claim 1 , wherein the first and second gate insulating films include LaHfO layer.
17. The method according to claim 1 , wherein the first and second gate insulating films are amorphous.
18. The method according to claim 1 , wherein the aluminum segregated at the interface between the first metal layer and the first gate insulating film has a thickness of one atomic layer or greater after the heat treatment.
19. The method according to claim 1 , wherein the aluminum segregated at the interface between the first metal layer and the first gate insulating film has a thickness of 3 atomic layers or greater after the heat treatment.
20. The method according to claim 1 , wherein the aluminum at an interface between the second metal layer and the second gate insulating film has a thickness thinner than one atomic layer after the heat treatment.
21. The method according to claim 1 , wherein the aluminum at an interface between the second metal layer and the second gate insulating film has a thickness thinner than 0.1 atomic layers after the heat treatment.
22. The method according to claim 1 , wherein the semiconductor device is a CMISFET.