Semiconductor device, capacitor, and field effect transistor
View Patent ↗It is made possible to provide a semiconductor device that has the effective work function of the connected metal optimized at the interface between a semiconductor and the metal. A semiconductor device includes: a semiconductor film; an oxide film formed on the semiconductor film, the oxide film including at least one of Hf and Zr, and at least one element selected from the group consisting of V, Cr, Mn, Nb, Mo, Tc, W, and Re being added to the oxide film; and a metal film formed on the oxide film.
1. A semiconductor device comprising:
a semiconductor film;
an oxide film formed on the semiconductor film, the oxide film including at least one of Hf and Zr, and at least one element selected from the group consisting of V, Cr, Mn, Nb, Mo, Tc, W, and Re being added to the oxide film; and
a metal film formed on the oxide film.
2. The device according to claim 1 , wherein at least one element selected from the group consisting of F, H, Ta, N, C, B, Mg, Ca, Sr, Ba, Al, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu is added to the oxide film.
3. A field effect transistor comprising:
a semiconductor substrate;
source and drain regions made of a semiconductor, formed at a distance from each other in the semiconductor substrate, and having a different conductivity type from the semiconductor substrate;
a gate insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region, the portion being a channel region;
a gate electrode formed on the gate insulating film;
oxide films formed on the source and drain regions, the oxide films including at least one of Hf and Zr, and at least one first element selected from the group consisting of V, Cr, Mn, Nb, Mo, Tc, W, and Re being added to the oxide films; and
source and drain electrodes made of a metal, and formed on the oxide films.
4. The transistor according to claim 3 , wherein the first element to be added to the oxide films has area density in the range of 6×10 12 atoms/cm 2 to 8×10 14 atoms/cm 2 .
5. The transistor according to claim 3 , wherein at least one second element selected from the group consisting of F, H, Ta, N, C, B, Mg, Ca, Sr, Ba, Al, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu is added to the oxide films.
6. The transistor according to claim 3 , wherein:
the first element to be added to the oxide films is Nb or W; and
the channel region is made of a p-type semiconductor.
7. The transistor according to claim 6 , wherein at least one element selected from the group consisting of N, C, B, Mg, Ca, Sr, Ba, Al, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu is further added to the oxide films.
8. The transistor according to claim 3 , wherein:
the first element to be added to the oxide films is an element selected from the group consisting of V, Cr, Mn, Tc, Re, and Mo;
at least one element selected from the group consisting of F, H, and Ta is further added to the oxide films; and
the channel region is made of a p-type semiconductor.
9. The transistor according to claim 3 , wherein:
the first element to be added to the oxide films is an element selected from the group consisting of Nb, W, and Mo;
at least one element selected from the group consisting of N, C, B, Mg, Ca, Sr, Ba, Al, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu is further added to the oxide films; and
the channel region is made of an n-type semiconductor.
10. The transistor according to claim 3 , wherein:
the first element to be added to the oxide films is an element selected from the group consisting of V, Cr, Mn, Tc, and Re; and
the channel region is made of an n-type semiconductor.
11. The transistor according to claim 10 , wherein at least one element selected from the group consisting of F, H, and Ta is further added to the oxide films.
12. A semiconductor device comprising:
a semiconductor substrate;
source and drain regions made of a semiconductor, formed at a distance from each other in the semiconductor substrate, and having a different conductivity type from the semiconductor substrate;
a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region, the portion being a channel region;
a charge storage film formed on the first insulating film;
a second insulating film formed on the charge storage film;
a control electrode formed on the second insulating film;
oxide films formed on the source and drain regions, the oxide films including at least one of Hf and Zr, and at least one first element selected from the group consisting of V, Cr, Mn, Nb, Mo, Tc, W, and Re being added to the oxide films; and
source and drain electrodes made of a metal, and formed on the oxide films.