Semiconductor device fabrication method
View Patent ↗According to an aspect of the invention, there is provided a semiconductor device fabrication method including forming a first mask on a semiconductor substrate, processing the first mask to form a first mask pattern of a fine portion, forming a second mask on the semiconductor substrate on which the first mask pattern is formed, forming a second mask pattern on a predetermined portion of the second mask, forming a third mask pattern by anisotropically etching the second mask by using the second mask pattern, removing the second mask pattern and the first mask pattern, and processing the semiconductor substrate by using the third mask pattern.
1. A semiconductor device fabrication method comprising:
forming a first mask on a semiconductor substrate;
processing the first mask to form a first mask pattern of a fine portion;
forming a second mask on the semiconductor substrate on which the first mask pattern is formed;
forming a second mask pattern on the second mask, the second mask pattern sandwiching a region above a predetermined portion of the first mask pattern;
forming a third mask pattern by anisotropically etching the second mask by using the second mask pattern, the third mask pattern being formed on sidewalls of the predetermined portion of the first mask pattern and under the second mask pattern;
removing the second mask pattern and the first mask pattern; and
processing the semiconductor substrate by using the third mask pattern.
2. The method according to claim 1 , wherein the first mask comprises a silicon oxide film, and the second mask comprises a silicon nitride film.
3. The method according to claim 1 , wherein the semiconductor substrate contains silicon.
4. The method according to claim 1 , wherein the semiconductor substrate comprises an SOI substrate.
5. The method according to claim 4 , wherein a silicon active film of the SOI substrate is processed by using the second mask.
6. A semiconductor device fabrication method comprising:
forming a first mask on a semiconductor substrate;
processing the first mask and the semiconductor substrate to form a projection serving as a fine portion;
burying a dummy interlayer film on the semiconductor substrate on which the projection is formed;
forming a trench in the dummy interlayer film by removing the first mask included in the projection;
forming a second mask on the dummy interlayer film and in the trench;
forming a first mask pattern on the second mask, the first mask pattern sandwiching a region above a predetermined portion of the trench;
forming a second mask pattern by anisotropically etching the second mask by using the first mask pattern, the second mask pattern being formed on inner sidewalls of the predetermined portion of the trench and under the first mask pattern;
removing the first mask pattern; and
processing the semiconductor substrate by using the second mask pattern.
7. The method according to claim 6 , wherein each of the first mask and the second mask comprises a silicon nitride film.
8. The method according to claim 6 , wherein the semiconductor substrate contains silicon.
9. The method according to claim 6 , wherein the semiconductor substrate comprises an SOI substrate.
10. The method according to claim 9 , wherein a silicon active film of the SOI substrate is processed by using the second mask.